Full PDF Text Transcription for CJ8820 (Reference)
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CJ8820. For precise diagrams, tables, and layout, please refer to the original PDF.
CJ8820 SOT-23 Plastic-Encapsulate MOSFETS CJ8820 N-Channel Enhancement Mode Field Effect Transistor DESCRIPTION The CJ8820 use advanced trench technology to provide excel...
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DESCRIPTION The CJ8820 use advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch,facilitated by its common-drain configuration. SOT-23 1. GATE 2. SOURCE 3. DRAIN Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Drain-source voltage VDS Gate-source voltage VGS Continuous drain current (t ≤10s) ID Pulsed drain current * IDM Power dissipation PD Thermal resistance from junction to ambient RθJA Junction temperature TJ Storage temperature Tstg * Repetitive rating : Pulse width limited by
CJ8820 Datasheet
