to provide enhanced voltage-blocking capability without degrading performance over time.
In addition , this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes .
Key Features
z Robust High Voltage Termination z Avalanche Energy Specified z Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode z Diode is Charact.
Full PDF Text Transcription for CJD01N60 (Reference)
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CJD01N60 TO-251-3L Plastic-Encapsulate MOSFETS CJD01N60 N-Channel Power MOSFET General Description The high voltage MOSFET uses an advanced termination scheme to provide ...
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he high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition , this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes . The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power suppliers, converters and PWM motor controls , these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safet
CJD01N60 Datasheet
