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CJD01N60 - N-Channel Power MOSFET

General Description

to provide enhanced voltage-blocking capability without degrading performance over time.

In addition , this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes .

Key Features

  • z Robust High Voltage Termination z Avalanche Energy Specified z Source-to-Drain Diode Recovery Time Comparable to a Discre.

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Datasheet Details

Part number CJD01N60
Manufacturer JCET
File Size 299.29 KB
Description N-Channel Power MOSFET
Datasheet download datasheet CJD01N60 Datasheet

Full PDF Text Transcription for CJD01N60 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for CJD01N60. For precise diagrams, and layout, please refer to the original PDF.

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate MOSFETS CJD01N60 N-Channel Power MOSFET General Description The high voltage MOSFET uses ...

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Channel Power MOSFET General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition , this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes . The new energy efficient design also offers a drain-to-source diode with a fast recovery time.

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