CJD01N60 Datasheet PDF - ZPSEMI N-Channel Power MOSFET Specs

CJD01N60 - N-Channel Power MOSFET

Datasheet Summary

Description

to provide enhanced voltage-blocking capability without degrading performance over time.

In addition , this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes .

Features

z Robust High Voltage Termination z Avalanche Energy Specified z Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode z Diode is Charact.

Datasheet Details

Part number	CJD01N60
Manufacturer	ZPSEMI
File Size	710.58 KB
Description	N-Channel Power MOSFET
Datasheet	CJD01N60 Datasheet
Additional preview pages of the CJD01N60 datasheet.

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Full PDF Text Transcription

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CJD01N60 TO-251-3L Plastic-Encapsulate MOSFETS CJD01N60 N-Channel Power MOSFET General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition , this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes . The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power suppliers, converters and PWM motor controls , these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. TO-251-3L 1.

Published: Dec 19, 2016 |