• Part: CJD05N60B
  • Manufacturer: ZPSEMI
  • Size: 620.64 KB
Download CJD05N60B Datasheet PDF
CJD05N60B page 2
Page 2

CJD05N60B Description

This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits.