CJD05N60B - N-Channel Power MOSFET

Description

This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently.

This new high energy device also offers a drain-to-source diode fast recovery time.

CJD05N60B n-channel power mosfet by ZPSEMI - Datasheet Preview

Datasheet Details

Part number	CJD05N60B
Manufacturer	ZPSEMI
File Size	620.64 KB
Description	N-Channel Power MOSFET
Datasheet	CJD05N60B Datasheet

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Full PDF Text Transcription

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CJD05N60B TO-251S Plastic-Encapsulate MOSFETS CJD05N60B N-Channel Power MOSFET GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits. FEATURE z High Current Rating z Lower RDS(on) z Lower Capacitance z Lower Total Gate Charge z Tighter VSD Specifications z Avalanche Energy Specified TO-251S 1. GATE 2. DRAIN 3.

Published: Dec 19, 2016 |