Datasheet Summary
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251S Plastic-Encapsulate MOSFETS
V(BR)DSS
600V
N-Channel Power MOSFET
RDS(on)MAX
2.5Ω@10V
5A
GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits.
TO-251S
1. GATE 2. DRAIN 3. SOURCE
FEATURE z High Current Rating z Lower RDS(on) z Lower Capacitance z Lower Total Gate Charge z Tighter VSD Specifications z...