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CJD05N60B - N-Channel MOSFET

Datasheet Summary

Description

This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently.

This new high energy device also offers a drain-to-source diode fast recovery time.

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Datasheet preview – CJD05N60B

Datasheet Details

Part number CJD05N60B
Manufacturer JCET
File Size 636.54 KB
Description N-Channel MOSFET
Datasheet download datasheet CJD05N60B Datasheet
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Full PDF Text Transcription

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251S Plastic-Encapsulate MOSFETS CJD05N60B V(BR)DSS 600V N-Channel Power MOSFET RDS(on)MAX ID 2.5Ω@10V 5A GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits. TO-251S 1. GATE 2. DRAIN 3.
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