CJD05N60B - N-Channel Power MOSFET

Datasheet Summary

Description

This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently.

This new high energy device also offers a drain-to-source diode fast recovery time.

CJD05N60B N-Channel Power MOSFET by ZPSEMI - Datasheet Preview — Datasheet preview – CJD05N60B

Datasheet Details

Part number	CJD05N60B
Manufacturer	ZPSEMI
File Size	620.64 KB
Description	N-Channel Power MOSFET
Datasheet	CJD05N60B Datasheet
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CJD05N60B TO-251S Plastic-Encapsulate MOSFETS CJD05N60B N-Channel Power MOSFET GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits. FEATURE z High Current Rating z Lower RDS(on) z Lower Capacitance z Lower Total Gate Charge z Tighter VSD Specifications z Avalanche Energy Specified TO-251S 1. GATE 2. DRAIN 3.

Published: Dec 19, 2016 |