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CJD05N60B - N-Channel Power MOSFET

General Description

This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently.

This new high energy device also offers a drain-to-source diode fast recovery time.

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Datasheet Details

Part number CJD05N60B
Manufacturer ZPSEMI
File Size 620.64 KB
Description N-Channel Power MOSFET
Datasheet download datasheet CJD05N60B Datasheet

Full PDF Text Transcription for CJD05N60B (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for CJD05N60B. For precise diagrams, and layout, please refer to the original PDF.

CJD05N60B TO-251S Plastic-Encapsulate MOSFETS CJD05N60B N-Channel Power MOSFET GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in t...

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his advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits. FEATURE z High Current Rating z Lower RDS(on) z Lower Capacitance z Lower Total Gate Charge z Tighter VSD Specifications z Avalanche Energy Specified TO-251S 1. GATE 2. DRAIN 3.

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