Datasheet4U Logo Datasheet4U.com

BST82 - SOT23 N CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

📥 Download Datasheet

Datasheet preview – BST82

Datasheet Details

Part number BST82
Manufacturer Zetex (now Diodes Incorporated)
File Size 49.34 KB
Description SOT23 N CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
Datasheet download datasheet BST82 Datasheet
Additional preview pages of the BST82 datasheet.

📁 Similar Datasheet

  • BST82 - N-channel transistor (NXP)
  • BST80 - N-channel transistor (NXP)
  • BST84 - N-channel transistor (NXP)
  • BST86 - N-channel transistor (NXP)
  • BST100 - P-channel transistor (NXP)
  • BST120 - P-channel transistor (NXP)
  • BST122 - P-channel transistor (NXP)
  • BST15 - PNP transistors (NXP)
  • BST16 - PNP transistors (NXP)
  • BST23C052V - TVS Diode (UMW)
Other Datasheets by Zetex Semiconductors
  • BST15 - SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR
  • BST16 - PNP TRANSISTOR

Full PDF Text Transcription

Click to expand full text
SOT23 N CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET I I Issue 2 - October 1997 PARTMARKING DETAIL – O2 www.DataSheet4U.com BST82 C B E SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain Source Voltage Drain Source Voltage (non repetitive peak tp ≤ 2ms) Continuous Drain Current at T amb=25°C Drain Current Peak Gate-Source Voltage Max Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V DS V DS(sm) ID I DM V GS PD T j :T stg VALUE 80 100 175 600 ± 20 300 -55 to +150 UNIT V V mA mA V mW °C ELECTRIAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
Published: |