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BST82 - N-channel transistor

General Description

N-channel enhancement mode vertical D-MOS transistor in SOT23 envelope and designed for use as Surface Mounted Device (SMD) in thin and thick-film circuits for telephone ringer and for application with relay, high-speed and line-transformer drivers.

Key Features

  • Direct interface to C-MOS, TTL, etc.
  • High-speed switching.
  • No second breakdown.
  • Low RDS(on) Transfer admittance ID = 175 mA; VDS = 5 V.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BST82 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in SOT23 envelope and designed for use as Surface Mounted Device (SMD) in thin and thick-film circuits for telephone ringer and for application with relay, high-speed and line-transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No second breakdown • Low RDS(on) Transfer admittance ID = 175 mA; VDS = 5 V PINNING - SOT23 1 2 3 PIN CONFIGURATION = gate = source = drain  Yfs typ.