BST82
DESCRIPTION
N-channel enhancement mode vertical D-MOS transistor in SOT23 envelope and designed for use as Surface Mounted Device (SMD) in thin and thick-film circuits for telephone ringer and for application with relay, high-speed and line-transformer drivers. FEATURES
- Direct interface to C-MOS, TTL, etc.
- High-speed switching
- No second breakdown
- Low RDS(on) Transfer admittance ID = 175 m A; VDS = 5 V PINNING
- SOT23 1 2 3 PIN CONFIGURATION = gate = source = drain Yfs typ. QUICK REFERENCE DATA Drain-source voltage Drain-source voltage (non-repetitive peak; tp ≤ 2 ms) Gate-source voltage (open drain) Drain current (DC) Total power dissipation up to Tamb = 25 °C Drain-source ON-resistance ID = 150 m A; VGS = 5 V RDS(on) typ. max. VDS VDS(SM) ±VGSO ID Ptot max. max. max. max. max.
80 V 100 V 20 V 175 m A 300 m W 7 Ω 10 Ω
150 m S handbook, halfpage
3 handbook, 2 columns d g
1 Top view 2
MSB003 MBB076
- 1 s
Marking: 02p
Fig.1 Simplified outline and symbol.
April...
