BST86
DESCRIPTION
N-channel enhancement mode vertical D-MOS transistor in SOT89 envelope and designed for use as Surface Mounted Device (SMD) in thin and thick-film circuits for application with relay, high-speed and line-transformer drivers. FEATURES
- Direct interface to C-MOS, TTL, etc.
- High-speed switching
- No second breakdown PINNING
- SOT89 1 2 3 = source = drain = gate QUICK REFERENCE DATA Drain-source voltage Drain-source voltage (non-repetitive peak; tp ≤ 2 ms) Gate-source voltage (open drain) Drain current (DC) Total power dissipation up to Tamb = 25 °C Drain-source ON-resistance ID = 15 m A; VGS = 3 V Transfer admittance ID = 300 m A; VDS = 15 V Yfs typ. RDS(on) typ. max. VDS VDS(SM) ±VGSO ID Ptot max. max. max. max. max.
180 V 200 V 20 V 300 m A 1 W 7 Ω 10 Ω
250 m S
PIN CONFIGURATION handbook, halfpage d g 1 Bottom view 2 3
MAM355 s
Marking: K0
Fig.1 Simplified outline and symbol.
April 1995
Philips Semiconductors
Product specification
N-channel...
