BST80
FEATURES
- Low drain-source on-state resistance
- Direct interface to C-MOS, TTL, etc.
- High-speed switching
- No secondary breakdown. APPLICATIONS
- Thin and thick film circuits
- Relay, high-speed and line transformer drivers. g handbook, halfpage
PINNING
- SOT89 PIN 1 2 3 SYMBOL s d g source drain gate DESCRIPTION d
DESCRIPTION
N-channel enhancement mode vertical D-MOS transistor in a SOT89 package.
1 Bottom view 2 3
MAM355 s
Marking code: KM
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA SYMBOL VDS VGSO ID Ptot RDSon yfs PARAMETER drain-source voltage (DC) gate-source voltage (DC) drain current (DC) total power dissipation drain-source on-state resistance forward transfer admittance Tamb ≤ 25 °C ID = 500 m A; VGS = 10 V ID = 500 m A; VDS = 15 V open drain CONDITIONS
- -
- - 2 300 TYP. MAX. 80 ±20 500 1 3
- V V m A W Ω m S UNIT
1997 Jun 20
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistor
LIMITING VALUES...
