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BST80 - N-channel transistor

General Description

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT89 package.

Fig.1 Simplified outline and symbol.

Key Features

  • Low drain-source on-state resistance.
  • Direct interface to C-MOS, TTL, etc.
  • High-speed switching.
  • No secondary breakdown.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BST80 N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC13b 1997 Jun 20 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor FEATURES • Low drain-source on-state resistance • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. APPLICATIONS • Thin and thick film circuits • Relay, high-speed and line transformer drivers. g handbook, halfpage BST80 PINNING - SOT89 PIN 1 2 3 SYMBOL s d g source drain gate DESCRIPTION d DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT89 package. 1 Bottom view 2 3 MAM355 s Marking code: KM Fig.1 Simplified outline and symbol.