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BST80 Datasheet N-channel Transistor

Manufacturer: NXP Semiconductors

Overview: DISCRETE SEMICONDUCTORS DATA SHEET BST80 N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC13b 1997 Jun 20 Philips.

General Description

d DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT89 package.

1 Bottom view 2 3 MAM355 s Marking code: KM Fig.1 Simplified outline and symbol.

QUICK REFERENCE DATA SYMBOL VDS VGSO ID Ptot RDSon yfs PARAMETER drain-source voltage (DC) gate-source voltage (DC) drain current (DC) total power dissipation drain-source on-state resistance forward transfer admittance Tamb ≤ 25 °C ID = 500 mA;

Key Features

  • Low drain-source on-state resistance.
  • Direct interface to C-MOS, TTL, etc.
  • High-speed switching.
  • No secondary breakdown.

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