BST84
DESCRIPTION
N-channel vertical D-MOS transistor in SOT89 envelope and designed for use as line current interrupter in telephone sets and for application in relay, high-speed and line-transformer drivers. FEATURES
- Direct interface to C-MOS, TTL, etc.
- High-speed switching
- No second breakdown PINNING
- SOT89 1 = source 2 = gate 3 = drain Transfer admittance ID = 250 m A; VDS = 15 V Yfs typ. QUICK REFERENCE DATA Drain-source voltage Gate-source voltage (open drain) Drain current (DC) Total power dissipation up to Tamb = 25 °C Drain-source ON-resistance ID = 250 m A; VGS = 10 V RDS(on) typ. max. VDS ±VGSO ID Ptot max. max. max. max.
200 V 20 V 250 m A 1 W 6 Ω 12 Ω
250 m S
PIN CONFIGURATION handbook, halfpage handbook, 2 columns d g
MBB076
- 1 s
Bottom view
MSB013
Marking: KN
Fig.1 Simplified outline and symbol.
April 1995
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistor
RATINGS Limiting values in...
