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FXTA42 - NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR

Features

  • 300 Volt VCEO.

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Full PDF Text Transcription

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www.DataSheet4U.com NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 1 – SEPT 93 FEATURES * 300 Volt VCEO APPLICATIONS * Telephone dialler circuits FXTA42 B C E REFER TO MPSA42 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IC Ptot Tj:Tstg E-Line TO92 Compatible VALUE 300 300 6 500 680 -55 to +175 UNIT V V V mA mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO MIN. 300 300 6 0.1 0.1 0.5 0.9 25 40 40 50 6 3-64 MHz pF TYP.
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