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Zetex Semiconductors

ZC834 Datasheet Preview

ZC834 Datasheet

SOT23 SILICON VARIABLE CAPACITANCE DIODES

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SOT23 SILICON VARIABLE
CAPACITANCE DIODES
ISSUE 5 – JANUARY 1998
FEATURES
* Close Tolerance C-V Characteristics
* High Tuning Ratio
* Low IR
Enabling Excellent Phase Noise Performance
(IR Typically <200pA at 25V)
1
3
ZC830/A/B
to
ZC836/A/B
2
1
3
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Forward Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
IF
Ptot
Tj:Tstg
ELECTRICAL CHARACTERISTICS (at Tamb =25°C)
PARAMETER
SYMBOL MIN TYP
MAX
Reverse Breakdown
Voltage
VBR 25
Reverse Voltage Leakage
Temperature Coefficient
of Capacitance
IR
η
0.2
0.03
10
0.04
TUNING CHARACTERISTICS (at Tamb =25°C)
PART NO
Nominal Capacitance (pF)
VR=2V, f=1MHz
MIN
NOM
MAX
Minimum
Q
@ VR=3V
f=50MHz
ZC830A
9.0 10.0 11.0 300
ZC831A
13.5 15.0 16.5 300
ZC832A
19.8 22.0 24.2 200
ZC833A
29.7 33.0 36.3 200
ZC834A
42.3 47.0 51.7 200
ZC835A
61.2 68.0 74.8 100
ZC836A
90.0
100.0
110.0
100
Note:
No suffix ±20% (e.g. ZC830), suffix B ± 5% (e.g. ZC830B)
Spice parameter data is available upon request for this device
MAX
200
330
-55 to +150
UNIT
mA
mW
°C
UNIT CONDITIONS
V IR=10µA
nA VR=20V
%/°C VR=3V, f=1MHz
Capacitance Ratio
C2 / C20
at f=1MHz
MIN
MAX
4.5 6.0
4.5 6.0
5.0 6.5
5.0 6.5
5.0 6.5
5.0 6.5
5.0 6.5




Zetex Semiconductors

ZC834 Datasheet Preview

ZC834 Datasheet

SOT23 SILICON VARIABLE CAPACITANCE DIODES

No Preview Available !

ZC830/A/B
to
ZC836/A/B
PARTMARKING DETAILS
PART NO
PARTMARK
ZC830
J1S
ZC831
J3S
ZC832
J4S
ZC833
J2S
ZC834
J5S
ZC835
J6S
ZC836
J7S
PART NO
ZC830A
ZC831A
ZC832A
ZC833A
ZC834A
ZC835A
ZC836A
PARTMARK
J1A
J3A
J4A
J2A
J5A
J6A
J7A
PART NO
ZC830B
ZC831B
ZC832B
ZC833B
ZC834B
ZC835B
ZC836B
PARTMARK
J1B
J3B
J4B
J2B
J5B
J6B
J7B
200
100
10
1
1
836A
835A
834A
833A
832A
831A
830A
10
Reverse Voltage (Volts)
Diode Capacitance
100


Part Number ZC834
Description SOT23 SILICON VARIABLE CAPACITANCE DIODES
Maker Zetex Semiconductors
Total Page 2 Pages
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