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SOT23 SILICON DUAL VARIABLE CAPACITANCE DIODE
ISSUE 2 – JANUARY 1998 FEATURES * VHF to UHF operation * Common Cathode Dual Diode * Monolithic construction APPLICATIONS * Mobile radios and Pagers * Cellular telephones * Voltage controlled Crystal Oscillators PARTMARKING DETAIL ZDC833A – C2A
PIN CONFIGURATION
1
ZDC833A
2
1 3
2
3
SOT23
ABSOLUTE MAXIMUM RATINGS.(Each Diode)
PARAMETER Forward Current Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL IF P tot T j:T stg VALUE 200 330 -55 to +150 UNIT mA mW °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C ). (Each Diode)
PARAMETER Reverse Breakdown Voltage Reverse Leakage Current Temperature Coefficient Diode Capacitance Capacitance Ratio Figure of Merit SYMBOL V BR MIN. 25 TYP. MAX.