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ZTX300 - NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR

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NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR ISSUE 2 – MARCH 94 ZTX300 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IC Ptot Tj:Tstg 25 25 5 E-Line TO92 Compatible VALUE UNIT V V V mA mW °C 500 300 -55 to +175 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SYMBOL V(BR)CBO VCEO(sus) V(BR)EBO ICBO MIN. 25 25 5 0.2 0.2 0.35 0.65 50 150 6 7 1.0 300 MHz pF dB TYP. MAX.
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