ZUMD54 - SILICON EPITAXIAL SCHOTTKY BARRIER DIODES

Features

Low VF & High Current Capability.

Zetex Semiconductors

Datasheet Details

Part number	ZUMD54
Manufacturer	Zetex Semiconductors
File Size	64.84 KB
Description	SILICON EPITAXIAL SCHOTTKY BARRIER DIODES
Datasheet	ZUMD54 Datasheet
Additional preview pages of the ZUMD54 datasheet.

📁 Similar Datasheet

ZUMT491 - NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR (Diodes)
ZUMT717 - 12V PNP POWER SWITCHING TRANSISTOR (Diodes)
ZUMT718 - 20V PNP POWER SWITCHING TRANSISTOR (DIODES)
ZUMTS17N - NPN RF TRANSISTOR (Diodes)

Other Datasheets by Zetex Semiconductors

ZUMD54C - SILICON EPITAXIAL SCHOTTKY BARRIER DIODES
ZUMD70-04 - SILICON PLANAR DUAL SCHOTTKY BARRIER DIODES
ZUMD70-05 - SILICON PLANAR DUAL SCHOTTKY BARRIER DIODES
ZUMT2222A - PNP SILICON PLANAR SWITCHING TRANSISTOR
ZUMT2907A - PNP SILICON PLANAR SWITCHING TRANSISTOR
ZUMT413 - NPN SILICON PLANAR AVALANCHE TRANSISTOR
ZUMT491 - NPN Silicon Transistor
ZUMT5179 - NPN SILICON PLANAR HIGH FREQUENCY TRANSISTOR

Full PDF Text Transcription

Click to expand full text

SOT323 SILICON EPITAXIAL SCHOTTKY BARRIER DIODES ISSUE 1– DECEMBER 1998 1 1 ZUMD54 ZUMD54C 3 2 3 2 3 1 SINGLE ZUMD54 Partmark: D8 COMMON CATHODE ZUMD54C Partmark: D8C FEATURES: Low VF & High Current Capability APPLICATIONS: PSU, Mobile Telecomms & SCSI ABSOLUTE MAXIMUM RATINGS. PARAMETER Continuous Reverse Voltage Forward Current Forward Voltage @ I F =10mA Repetitive Peak Forward Current Non Repetitive Forward Current Power Dissipation at T amb=25°C Storage Temperature Range JunctionTemperature ¤ t<1s SYMBOL VR IF VF I FRM I FSM P tot T stg Tj VALUE 30 200 400 300 600 330 -55 to +150 125 UNIT V mA mV mA mA mW °C °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Reverse Breakdown Voltage Forward Voltage SYMBOL V (BR)R VF MIN. 30 TYP.

Published: Apr 17, 2005 |