ZUMD54 Datasheet | Zetex Semiconductors

FEATURES : Low VF & High Current Capability APPLICATIONS: PSU, Mobile Telems & SCSI ABSOLUTE MAXIMUM RATINGS. PARAMETER Continuous Reverse Voltage Forward Current Forward Voltage @ I F =10m A Repetitive Peak Forward Current Non Repetitive Forward Current Power Dissipation at T amb=25°C Storage Temperature Range Junction Temperature ¤ t<1s SYMBOL VR IF VF I FRM I FSM P tot T stg Tj VALUE 30 200 400 300 600 330 -55 to +150 125 UNIT V m A m V m A m A m W °C °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Reverse Breakdown Voltage Forward Voltage SYMBOL V (BR)R VF MIN. 30 TYP. 50 135 200 280 350 530 1.4 7.5 240 320 400 500 1000 2 10 5 MAX. UNIT V m V m V m V m V m V CONDITIONS. I R=10 µ A I F=0.1m A I F=1m A I F=10m A I F=30m A I F=100m A V R=25V f=1MHz,V R=1V switched from I F=10m A to I R=10m A R L=100 Ω , I R=1m A Reverse Current Diode Capacitance Reverse Recovery Time IR CD t rr µA p F ns ¤ Dual Device; For simultaneous continuous use Tj=100°C. ZUMD54 ZUMD54C TYPICAL CHARACTERISTICS Forward Current IF (A) 10m 100m Reverse Current IR (A) 1m +125°C +85°C 10m +125°C +85°C +25°C 100µ 1m 100µ 10µ 0 0.15 0.3 0.45 0.6 0.75 0.9 10µ +25°C 1µ 0 10 20 30 Forward Voltage VF (V) Reverse Voltage VR (V) IF v VF Characteristics Diode Capacitance CT (p F) 15 330 IR v VR Characteristics - Power Dissipation (m W) 0 0 10 20 30 0 0 50 100 150 Reverse Voltage VR...