ZUMT618 Datasheet | Zetex Semiconductors

FEATURES - - - - - 500m W POWER DISSIPATION IC CONT 1.25A 3A Peak Pulse Current Excellent HFE Characteristics Up to 3A (pulsed) Extremely Low Equivalent On Resistance; RCE(sat) APPLICATIONS - Corded teles. - Boost functions in DC-DC converters - Motor driver functions DEVICE TYPE ZUMT618 PLEMENT ZUMT718 PARTMARKING T62 RCE(sat) 125mΩ at1.25A ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current- - Continuous Collector Current Base Current Power Dissipation at Tamb=25°C SYMBOL V CBO VCEO VEBO ICM IC IB Ptot VALUE 20 20 5 4 1.25 500 385 † 500 ‡ -55 to +150 UNIT V V V A A m A m W Operating and Storage Temperature Range Tj:Tstg °C † Remended Ptot calculated using FR4 measuring 10 x 8 x 0.6mm (still air). ‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4 size 25x25x0.6mm and using parable measurement methods adopted by other suppliers. ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO ICES VCE(sat) 16.5 40 80 140 155 955 840 200 300 200 100 40 20 420 450 380 300 180 60 210 10 50 275 MHz p F ns ns MIN. 20 20 5 10 10 10 25 60 115 200 250 1100 1100 TYP. MAX. UNIT V V V n A n A n A m V m V m V m V m V m V m V CONDITIONS. IC= 100µA IC= 10m A- IE= 100µA VCB= 16V VEB= 4V VCES= 16V IC= 100m A, IB=10m A- IC= 250m A, IB= 10m A- IC= 500m A, IB=10m A- IC= 1A, IB=20m A- IC= 1.25A, IB=50m A- IC= 1.25A, IB=50m A- IC= 1.25A, VCE= 2V- IC= 10m A, VCE= 2V- IC= 100m A, VCE= 2V- IC= 500m A, VCE=2V- IC= 1A, VCE=2 V- IC= 2A, VCE=2V- IC=4A, VCE= 2V- IC= 50m A, VCE=10V f= 100MHz VCB= 10V, f=1MHz VCC=10 V, IC=1A IB1=IB2=100m A Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward...