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Zetex Semiconductors

ZVN2110A Datasheet Preview

ZVN2110A Datasheet

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

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N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
* 100 Volt VDS
* RDS(on)= 4
ZVN2110A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at Tamb=25°C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VDS
ID
IDM
VGS
Ptot
Tj:Tstg
D
G
S
E-Line
TO92 Compatible
VALUE
100
320
6
± 20
700
-55 to +150
UNIT
V
mA
A
V
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BVDSS 100
V ID=1mA, VGS=0V
Gate-Source Threshold
Voltage
VGS(th)
0.8
2.4
V
ID=1mA, VDS= VGS
Gate-Body Leakage
Zero Gate Voltage Drain
Current
IGSS
IDSS
On-State Drain Current(1)
Static Drain-Source On-State
Resistance (1)
ID(on)
RDS(on)
1.5
20 nA VGS=± 20V, VDS=0V
1 µA VDS=100V, VGS=0
100 µA VDS=80V, VGS=0V, T=125°C(2)
A VDS=25V, VGS=10V
4 VGS=10V,ID=1A
Forward Transconductance gfs
(1)(2)
250
mS VDS=25V,ID=1A
Input Capacitance (2)
Common Source Output
Capacitance (2)
Ciss
Coss
75 pF
25 pF VDS=25 V, VGS=0V, f=1MHz
Reverse Transfer Crss 8 pF
Capacitance (2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
td(on)
tr
td(off)
tf
7 ns
8 ns VDD 25V, ID=1A
13 ns
13 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle 2%
(2) Sample test.
Switching times measured with 50source impedance and <5ns rise time on a pulse generator
3
)




Zetex Semiconductors

ZVN2110A Datasheet Preview

ZVN2110A Datasheet

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

No Preview Available !

ZVN2110A
TYPICAL CHARACTERISTICS
VGS=
2.0
10V
9V
1.6 8V
7V
1.2
6V
0.8
5V
0.4 4V
3V
0
0 20 40 60 80 100
VDS - Drain Source Voltage (Volts)
Output Characteristics
2.0
1.6
1.2
0.8
0.4
0
2 468
VDS - Drain Source Voltage (Volts)
Saturation Characteristics
VGS=
10V
9V
8V
7V
6V
5V
4V
3V
10
10
8
6
4
ID=
1A
2
500mA
100mA
0
0 2 4 6 8 10
VGS-Gate Source Voltage (Volts)
Voltage Saturation Characteristics
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
0
VDS=25V
VDS=10V
2 4 6 8 10
VGS-Gate Source Voltage (Volts)
Transfer Characteristics
10
5
ID=
1A
500mA
100mA
1
1 10 100
VGS-Gate Source Voltage (Volts)
On-resistance v gate-source voltage
2.4
2.2
2.0
1.8
1.6
1.4
1.2
Drain-Source
Resistance
RDS(on)
VGS=10V
ID=1 A
VGS=VDS
ID=1mA
1.0
0.8 Gate Threshold Voltage VGS(TH)
0.6
-40 -20 0 20 40 60 80 100 120 140 160 180
Tj-Junction Temperature (°C)
Normalised RDS(on) and VGS(th) v Temperature
3-365


Part Number ZVN2110A
Description N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
Maker Zetex Semiconductors
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ZVN2110A Datasheet PDF






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