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Zetex Semiconductors

ZVN2110G Datasheet Preview

ZVN2110G Datasheet

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

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SOT223 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 – OCTOBER 1995 7
FEATURES
* 6A PULSE DRAIN CURRENT
* FAST SWITCHING SPEED
ZVN2110G
D
S
PARTMARKING DETAIL - ZVN2110
COMPLEMENTARY TYPE - ZVP2110G
D
G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
VDS 100 V
Continuous Drain Current at Tamb=25°C
ID
500 mA
Pulsed Drain Current
IDM 6 A
Gate Source Voltage
VGS
± 20 V
Power Dissipation at Tamb=25°C
Ptot
2W
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
BVDSS
VGS(th)
IGSS
IDSS
On-State Drain Current(1)
Static Drain-Source On-State
Resistance (1)
ID(on)
RDS(on)
100 V
0.8 2.4 V
0.1 20 nA
1 µA
100 µA
1.5 2
A
4
ID=1mA, VGS=0V
ID=1mA, VDS= VGS
VGS=± 20V, VDS=0V
VDS=100V, VGS=0
VDS=80V, VGS=0V, T=125°C(2)
VDS=25V, VGS=10V
VGS=10V, ID=1A
Forward Transconductance (1)(2)
Input Capacitance (2)
Common Source Output
Capacitance (2)
gfs
Ciss
Coss
250 350
59 75
16 25
mS
pF
pF
VDS=25V, ID=1A
VDS=25 V, VGS=0V, f=1MHz
Reverse Transfer Capacitance (2) Crss
48
Turn-On Delay Time (2)(3)
td(on)
47
Rise Time (2)(3)
tr 4 8
Turn-Off Delay Time (2)(3)
td(off)
8 13
Fall Time (2)(3)
tf 8 13
DRAIN-SOURCE DIODE CHARACTERISTICS
pF
ns
ns
ns
ns
VDD 25V, ID=1A
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Diode Forward Voltage (1) VSD
0.82 V IS=0.32A, VGS=0
Reverse Recovery Time
TRR
112 ns IF=0.32A, VGS=0, IR=0.1A
(1) Measured under pulsed conditions. Width=300µs. Duty cycle 2% (2) Sample test.
(3) Switching times measured with 50source impedance and <5ns rise time on a pulse generator
3 - 387




Zetex Semiconductors

ZVN2110G Datasheet Preview

ZVN2110G Datasheet

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

No Preview Available !

ZVN2110G
TYPICAL CHARACTERISTICS
VGS=
2.0
10V
9V
1.6 8V
7V
1.2
6V
0.8
5V
0.4 4V
3V
0
0 20 40 60 80 100
VDS - Drain Source Voltage (Volts)
Output Characteristics
2.0
1.6
1.2
0.8
0.4
0
2 468
VDS - Drain Source Voltage (Volts)
Saturation Characteristics
VGS=
10V
9V
8V
7V
6V
5V
4V
3V
10
10
8
6
4
ID=
1A
2
500mA
100mA
0
0 2 4 6 8 10
VGS-Gate Source Voltage (Volts)
Voltage Saturation Characteristics
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
0
VDS=25V
VDS=10V
2 4 6 8 10
VGS-Gate Source Voltage (Volts)
Transfer Characteristics
10
5
ID=
1A
500mA
100mA
1
1 10 100
VGS-Gate Source Voltage (Volts)
On-resistance v gate-source voltage
2.4
2.2
2.0
1.8
1.6
1.4
1.2
Drain-Source
Resistance
RDS(on)
VGS=10V
ID=1 A
VGS=VDS
ID=1mA
1.0
0.8 Gate Threshold Voltage VGS(TH)
0.6
-40 -20 0 20 40 60 80 100 120 140 160 180
Tj-Junction Temperature (°C)
Normalised RDS(on) and VGS(th) v Temperature
3 - 388


Part Number ZVN2110G
Description N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
Maker Zetex Semiconductors
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ZVN2110G Datasheet PDF






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