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ZXMN6A11Z - N-Channel MOSFET

Description

This new generation trench MOSFET from Zetex

Features

  • a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management.

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ZXMN6A11Z 60V SOT89 N-channel enhancement mode MOSFET Summary V(BR)DSS 60 RDS(on) (⍀) 0.120 @ VGS= 10V 0.180 @ VGS= 4.5V ID (A) 3.6 2.9 Description This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. Features • • • www.DataSheet4U.com D Low on-resistance Fast switching speed Low threshold Low gate drive SOT89 package G S • • Applications • • • • DC-DC converters Power management functions Disconnect switches Motor control S D D G Tape width (mm) 12 Quantity per reel 1,000 Ordering information Device ZXMN6A11ZTA Reel size (inches) 7 Top view Device marking 11N6 Issue 2 - September 2006 © Zetex Semiconductors plc 2006 1 www.
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