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Zetex Semiconductors

ZXMN6A11Z Datasheet Preview

ZXMN6A11Z Datasheet

SOT89 N-channel enhancement mode MOSFET

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ZXMN6A11Z
60V SOT89 N-channel enhancement mode MOSFET
Summary
V(BR)DSS
60
RDS(on) ()
0.120 @ VGS= 10V
0.180 @ VGS= 4.5V
ID (A)
3.6
2.9
Description
This new generation trench MOSFET from Zetex features a unique
structure combining the benefits of low on-resistance and fast
switching, making it ideal for high efficiency power management
applications.
www.DataSheet4U.com
Features
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• SOT89 package
D
G
S
Applications
• DC-DC converters
• Power management functions
• Disconnect switches
• Motor control
Ordering information
Device
ZXMN6A11ZTA
Reel size
(inches)
7
Tape width
(mm)
12
Quantity per
reel
1,000
S
DD
G
Top view
Device marking
11N6
Issue 2 - September 2006
© Zetex Semiconductors plc 2006
1
www.zetex.com




Zetex Semiconductors

ZXMN6A11Z Datasheet Preview

ZXMN6A11Z Datasheet

SOT89 N-channel enhancement mode MOSFET

No Preview Available !

ZXMN6A11Z
Absolute maximum ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current @ VGS= 10V; Tamb=25°C(b)
@ VGS= 10V; Tamb=70°C(b)
@ VGS= 10V; Tamb=25°C(a)
Pulsed drain current(c)
Continuous source current (body diode)(b)
Pulsed source current (body diode)(c)
Power dissipation at Tamb =25°C(a)
Linear derating factor
Power dissipation at Tamb =25°C(b)
Linear derating factor
Operating and storage temperature range
Symbol
VDSS
VGS
ID
IDM
IS
ISM
PD
PD
Tj, Tstg
Limit
60
±20
3.6
Unit
V
V
A
2.9
2.7
14.5 A
3.7 A
14.5 A
1.5 W
12 mW/°C
2.6 W
21 mW/°C
-55 to +150 °C
Thermal resistance
Parameter
Junction to ambient(a)
Junction to ambient(b)
Symbol
RJA
RJA
Limit
83.3
47.4
Unit
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b) For a device surface mounted on FR4 PCB measured at t 10 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300s - pulse width limited by maximum junction
temperature.
Issue 2 - September 2006
© Zetex Semiconductors plc 2006
2
www.zetex.com


Part Number ZXMN6A11Z
Description SOT89 N-channel enhancement mode MOSFET
Maker Zetex Semiconductors
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ZXMN6A11Z Datasheet PDF






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