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ADVANCE INFORMATION
ZXMN6A11DN8
60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 60V
RDS(ON) Max
120mΩ @ VGS = 10V 180mΩ @ VGS = 4.5V
ID MAX TA = +25°C
3.2A 2.6A
Features and Benefits
Low On-Resistance Fast Switching Speed Low Threshold Low Gate Drive Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
ZXMN6A11DN8 Datasheet
