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ZXMN6A11DN8 - 60V DUAL N-CHANNEL MOSFET

General Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

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Key Features

  • Low On-Resistance.
  • Fast Switching Speed.
  • Low Threshold.
  • Low Gate Drive.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ADVANCE INFORMATION ZXMN6A11DN8 60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) Max 120mΩ @ VGS = 10V 180mΩ @ VGS = 4.5V ID MAX TA = +25°C 3.2A 2.6A Features and Benefits  Low On-Resistance  Fast Switching Speed  Low Threshold  Low Gate Drive  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability Description and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.