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ZXMN6A11Z 60V SOT89 N-channel enhancement mode MOSFET
Summary
V(BR)DSS 60 RDS(on) (⍀) 0.120 @ VGS= 10V 0.180 @ VGS= 4.5V ID (A) 3.6 2.9
Description
This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications.
Features
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Low on-resistance Fast switching speed Low threshold Low gate drive SOT89 package
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Applications
• • • • DC-DC converters Power management functions Disconnect switches Motor control
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Tape width (mm) 12 Quantity per reel 1,000
Ordering information
Device ZXMN6A11ZTA Reel size (inches) 7
Top view
Device marking
11N6
Issue 2 - September 2006
© Zetex Semiconductors plc 2006
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