ZXMN6A11Z Datasheet | Zetex Semiconductors

Description This new generation trench MOSFET from Zetex features a unique structure bining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. Features - - - .. Low on-resistance Fast switching speed Low threshold Low gate drive SOT89 package - - Applications - - - - DC-DC converters Power management functions Disconnect switches Motor control Tape width (mm) 12 Quantity per reel 1,000 Ordering information Device ZXMN6A11ZTA Reel size (inches) 7 Top view Device marking 11N6 Issue 2 - September 2006 © Zetex Semiconductors plc 2006 .zetex. Absolute maximum ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current @ VGS= 10V; Tamb=25°C(b) @ VGS= 10V; Tamb=70°C(b) @ VGS= 10V; Tamb=25°C(a) Pulsed drain current(c) Continuous source current (body diode)(b) Pulsed source current (body diode)(c) Power dissipation at Tamb =25°C(a) Linear derating factor Power dissipation at Tamb =25°C(b) Linear derating factor Operating and storage temperature range Tj, Tstg PD IDM IS ISM PD Symbol VDSS VGS ID Limit 60 ±20 3.6 2.9 2.7 14.5 3.7 14.5 1.5 12 2.6 21 -55 to +150 A A A W m W/°C W m W/°C °C Unit V V A Thermal resistance Parameter Junction to ambient(a) Junction to ambient(b) Symbol R⍜JA R⍜JA Limit 83.3 47.4 Unit °C/W °C/W NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t 10 sec. (c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300␮s - pulse width limited by maximum junction temperature. Issue 2 - September 2006 © Zetex Semiconductors plc 2006 .zetex. Typical characteristics Issue 2 - September 2006 © Zetex Semiconductors plc...