Datasheet4U Logo Datasheet4U.com

ZXMP2120G4 - 200V P-CHANNEL ENHANCEMENT MODE MOSFET

Description

This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown.

Features

  • High voltage.
  • Low on-resistance.
  • Fast switching speed.
  • Low gate drive.
  • Low threshold.
  • SOT223 package variant engineered to increase spacing between high voltage pins.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com ZXMP2120G4 200V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS =-200V; RDS(ON) = 25 ; ID = 200mA DESCRIPTION This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and general high voltage circuits. A SOT23-5 version is also available (ZXMP2120E5). SOT223 FEATURES • High voltage • Low on-resistance • Fast switching speed • Low gate drive • Low threshold • SOT223 package variant engineered to increase spacing between high voltage pins.
Published: |