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ZXMP2120G4TA - 200V P-CHANNEL ENHANCEMENT MODE MOSFET

Download the ZXMP2120G4TA datasheet PDF. This datasheet also covers the ZXMP2120G4 variant, as both devices belong to the same 200v p-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This new generation trench MOSFET

Key Features

  • High Voltage.
  • Low On-resistance.
  • Fast Switching Speed.
  • Low Gate Drive.
  • Low Threshold.
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data.
  • Case: SOT223.
  • Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0.
  • Moisture Sensitivity: Level 1 per J-STD-020.
  • Terminals: Matte Tin F.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (ZXMP2120G4-Diodes.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Green ZXMP2120G4 200V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS -200V RDS(ON) 25Ω @ VGS = 10V ID TA = +25°C 200mA Description This new generation trench MOSFET features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. Applications  Active clamping of primary aide MOSFETs in 48 Volt DC-DC converters Features and Benefits  High Voltage  Low On-resistance  Fast Switching Speed  Low Gate Drive  Low Threshold  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.