ZXMP2120FF Datasheet | Zetex Semiconductors

Description This 200V enhancement mode P-channel MOSFET provides users with a petitive specification offering efficient power handling capability, high impedance and freedom from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of tele and general high voltage circuits. Features - - .. High voltage Low on-resistance Fast switching speed Low gate drive Low threshold SOT23 FLAT package - - - - Applications - Active clamping of primary side MOSFETs in 48 volt DC-DC converters Ordering information Device ZXMP2120FFTA Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3,000 G Top view Device marking 1C4 Issue 1 - January 2007 © Zetex Semiconductors plc 2007 .zetex. Absolute maximum ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current @ VGS= 10V; Tamb=25°C(a) Pulsed drain current(c) Pulsed source current (body diode)(c) Power dissipation at Tamb=25°C(a) Linear derating factor Power dissapation at Tamb=25°C(b) Linear derating factor Operating and storage temperature range Tj, Tstg PD Symbol VDSS VGS ID IDM ISM PD Limit -200 ± 20 -137 -0.8 -0.8 1 8 1.5 12.3 -55 to +150 Unit V V m A A A W m W/°C W m W/°C °C Thermal resistance Parameter Junction to ambient(a) Junction to ambient(b) Symbol R⍜JA R⍜JA Limit 125 81 Unit °C/W °C/W NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on FR4 pcb measured at t Յ5 sec. (c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300␮s - pulse width limited by maximum junction temperature. Issue 1 - January 2007 © Zetex Semiconductors plc 2007 .zetex. Thermal characteristics Issue 1 - January 2007 © Zetex Semiconductors plc...