ZXMP2120E5 Datasheet | Zetex Semiconductors

DESCRIPTION This 200V enhancement mode P-channel MOSFET provides users with a petitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Tele and general high voltage circuits. A 4 pin SOT223 version is also available (ZXMP2120G4). FEATURES SOT23-5 - High voltage - Low on-resistance - Fast switching speed - Low gate drive - Low threshold - SOT23-5 package variant engineered to increase spacing between high voltage pins. APPLICATIONS - Active clamping of primary side MOSFETs in 48 volt DC-DC converters ORDERING INFORMATION DEVICE ZXMP2120E5TA REEL SIZE (inches) 7 TAPE WIDTH (mm) 8mm embossed QUANTITY PER REEL 3,000 units N/C D N/C DEVICE MARKING - P120 PINOUT - TOP VIEW ISSUE 2 - SEPTEMBER 2006 1 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate Source Voltage SYMBOL V DSS V GS LIMIT -200 ± 20 -122 -0.7 -0.7 0.75 6 T j : T stg -55 to +150 UNIT V V m A A A W m W/°C °C Continuous Drain Current (V GS =10V; T amb =25°C) (a) I D I DM Pulsed Drain Current (c) Pulsed Source Current (Body Diode) (c) Power Dissipation at T amb =25°C Linear Derating Factor (a) I SM PD Operating and Storage Temperature Range THERMAL RESISTANCE PARAMETER Junction to Ambient (a) SYMBOL R θ JA VALUE 167 UNIT °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t р5 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. ISSUE 2 - SEPTEMBER 2006 2 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER STATIC Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V (BR)DSS V GS(th) I GSS I DSS -200...