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Zetex Semiconductors

ZXTN19060CFF Datasheet Preview

ZXTN19060CFF Datasheet

NPN high gain power transistor

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ZXTN19060CFF
60V, SOT23F, NPN high gain power transistor
Summary
BVCEX > 160V
BVCEO > 60V
BVECO > 6V
IC(cont) = 5.5A
VCE(sat) < 45mV @ 1A
RCE(sat) = 26m
PD = 1.5W
Complementary part number ZXTP19060CFF
www.DataSheet4U.com
Description
This mid voltage NPN transistor has been designed for applications
requiring high gain and low saturation voltage. The SOT23F package is
pin compatible with the industry standard SOT23 footprint but offers
lower profile and higher dissipation for applications where power
density is of utmost importance.
Features
• High gain
• Low saturation voltage
• Low profile small outline package
Applications
• Motor drive
• Siren driver
Ordering information
Device
ZXTN19060CFFTA
Reel size
(inches)
7
Tape width
(mm)
8
Quantity
per reel
3000
Device marking
1E4
C
B
E
E
C
B
Pinout - top view
Issue 1 - October 2006
© Zetex Semiconductors plc 2006
1
www.zetex.com




Zetex Semiconductors

ZXTN19060CFF Datasheet Preview

ZXTN19060CFF Datasheet

NPN high gain power transistor

No Preview Available !

ZXTN19060CFF
Absolute maximum ratings
Parameter
Collector-base voltage
Collector-emitter voltage (forward blocking)
Collector-emitter voltage
Emitter-collector voltage (reverse blocking)
Emitter-base voltage
Continuous collector current (c)
Base current
Peak pulse current
Power dissipation @ Tamb =25°C (a)
Linear derating factor
Power dissipation @ Tamb =25°C (b)
Linear derating factor
Power dissipation @ Tamb =25°C (c)
Linear derating factor
Power dissipation @ Tamb =25°C (d)
Linear derating factor
Operating and storage temperature range
Symbol
VCBO
VCEX
VCEO
VECO
VEBO
IC
IB
ICM
PD
PD
PD
PD
Tj, Tstg
Limit
160
160
60
6
7
5.5
1
12
0.84
6.72
1.34
10.72
1.50
12.0
2.0
16.0
- 55 to 150
Unit
V
V
V
V
V
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
°C
Thermal resistance
Parameter
Junction to ambient(a)
Junction to ambient(b)
Junction to ambient(c)
Junction to ambient(d)
Symbol
RJA
RJA
RJA
RJA
Limit
149.3
93.4
83.3
60
Unit
°C/W
°C/W
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(d) As (c) above measured at t<5secs.
Issue 1 - October 2006
© Zetex Semiconductors plc 2006
2
www.zetex.com


Part Number ZXTN19060CFF
Description NPN high gain power transistor
Maker Zetex Semiconductors
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