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Zetex Semiconductors

ZXTN25012EFL Datasheet Preview

ZXTN25012EFL Datasheet

NPN low power transistor

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ZXTN25012EFL
12V, SOT23, NPN low power transistor
Summary
BVCEO > 12V
BVECO > 4.5V
hFE > 500
IC(cont) = 2A
VCE(sat) < 65 mV @ 1A
RCE(sat) = 46 m
PD = 350mW
Description
Advanced process capability has been used to achieve high current gain
hold up making this device ideal for applications requiring high pulse
currents.
www.DataSheet4U.com
Features
• High peak current
• Low saturation voltage
• 6V reverse blocking voltage
Applications
• MOSFET and IGBT gate driving
• DC-DC conversion
• LED driving
• Interface between low voltage IC's and load
Ordering information
Device
ZXTN25012EFLTA
Reel size
(inches)
7
Tape width
(mm)
8
Quantity
per reel
3000
Device marking
1B6
C
B
E
E
C
B
Pinout - top view
Issue 2 - January 2007
© Zetex Semiconductors plc 2007
1
www.zetex.com




Zetex Semiconductors

ZXTN25012EFL Datasheet Preview

ZXTN25012EFL Datasheet

NPN low power transistor

No Preview Available !

ZXTN25012EFL
Absolute maximum ratings
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-collector voltage
Emitter-base voltage
Continuous collector current(a)
Base current
Peak pulse current
Power dissipation @ Tamb =25°C(a)
Linear derating factor
Operating and storage temperature range
Symbol
VCBO
VCEO
VECO
VEBO
IC
IB
ICM
PD
Tj, Tstg
Limit
20
12
4.5
7
2
500
15
350
2.8
- 55 to 150
Unit
V
V
V
V
A
mA
A
mW
mW/°C
°C
Thermal resistance
Parameter
Junction to ambient(a)
Symbol
RJA
Limit
357
Unit
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
Issue 2 - January 2007
© Zetex Semiconductors plc 2007
2
www.zetex.com


Part Number ZXTN25012EFL
Description NPN low power transistor
Maker Zetex Semiconductors
PDF Download

ZXTN25012EFL Datasheet PDF






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