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ZXTN25012EFL 12V, SOT23, NPN low power transistor
Summary
BVCEO > 12V BVECO > 4.5V hFE > 500 IC(cont) = 2A VCE(sat) < 65 mV @ 1A RCE(sat) = 46 m⍀ PD = 350mW
Description
Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse currents.
C
B
Features
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• • •
High peak current Low saturation voltage 6V reverse blocking voltage
E
Applications
• • • • MOSFET and IGBT gate driving DC-DC conversion LED driving Interface between low voltage IC's and load
E C B Pinout - top view
Ordering information
Device ZXTN25012EFLTA Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3000
Device marking
1B6
Issue 2 - January 2007
© Zetex Semiconductors plc 2007
1
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ZXTN25012EFL Datasheet
