npn transistor.
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High peak current Low saturation voltage 6V reverse blocking voltage
E
Applications
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* MOSFET and IGBT gate.
requiring high pulse currents.
C
B
Features
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High peak current Low saturation .
Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse currents.
C
B
Features
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High peak current Low saturation voltage 6.
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