ZXTN25015EFH
ZXTN25015EFH is NPN medium power transistor manufactured by Zetex Semiconductors.
Description
Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The pact size and ratings of this device make it ideally suited to applications where space is at a premium.
Features
- -
- High power dissipation SOT23 package High gain Low saturation voltage
Applications
- -
- - LED driving DC-DC converters MOSFET and IGBT gate driving Motor drive
E C B Pinout
- top view
Tape width (mm) 8 Quantity per reel 3,000
Ordering information
Device ZXTN25015DFHTA Reel size (inches) 7
Device marking
1A8
Issue 1
- May 2006
© Zetex Semiconductors plc 2006
.zetex.
ZXTN25015DFH
Absolute maximum ratings
Parameter Collector-base voltage Collector-emitter voltage (forward blocking) Collector-emitter voltage Emitter-collector voltage (reverse blocking) Emitter-base voltage Continuous collector current(c) Peak pulse current Power dissipation at Tamb = 25°C(a) Linear derating factor Power dissipation at Tamb = 25°C(b) Linear derating factor Power dissipation at Tamb = 25°C(c) Linear derating factor Power dissipation at Tamb = 25°C(d) Linear derating factor Operating and storage temperature range Tj, Tstg PD PD PD Symbol VCBO VCEX VCEO VECO VEBO IC ICM PD Limit 40 30 15 4.5 7 5 15 0.73 5.84 1.05 8.4 1.25 9.6 1.81 14.5
- 55 to 150 Unit V V V V V A A W m W/°C W m W/°C W m W/°C W m W/°C °C
Thermal resistance
Parameter Junction to ambient(a) Junction to ambient(b) Junction to ambient(c) Junction to ambient(d) Symbol R⍜JA R⍜JA R⍜JA R⍜JA Limit 171 119 100 69 Unit °C/W °C/W °C/W °C/W
NOTES: (a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper, in still air conditions. (c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper, in still air conditions. (d) As (c) above measured at...