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ZXTN25012EFL - NPN Transistor

General Description

Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse currents.

Key Features

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  • High peak current Low saturation voltage 6V reverse blocking voltage E.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ZXTN25012EFL 12V, SOT23, NPN low power transistor Summary BVCEO > 12V BVECO > 4.5V hFE > 500 IC(cont) = 2A VCE(sat) < 65 mV @ 1A RCE(sat) = 46 m⍀ PD = 350mW Description Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse currents. C B Features www.DataSheet4U.com • • • High peak current Low saturation voltage 6V reverse blocking voltage E Applications • • • • MOSFET and IGBT gate driving DC-DC conversion LED driving Interface between low voltage IC's and load E C B Pinout - top view Ordering information Device ZXTN25012EFLTA Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3000 Device marking 1B6 Issue 2 - January 2007 © Zetex Semiconductors plc 2007 1 www.zetex.