ZXTN25012EFL Datasheet | Zetex Semiconductors

Description Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse currents. Features .. - - - High peak current Low saturation voltage 6V reverse blocking voltage Applications - - - - MOSFET and IGBT gate driving DC-DC conversion LED driving Interface between low voltage IC's and load E C B Pinout - top view Ordering information Device ZXTN25012EFLTA Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3000 Device marking 1B6 Issue 2 - January 2007 © Zetex Semiconductors plc 2007 .zetex. Absolute maximum ratings Parameter Collector-base voltage Collector-emitter voltage Emitter-collector voltage Emitter-base voltage Continuous collector current(a) Base current Peak pulse current Power dissipation @ Tamb =25°C(a) Linear derating factor Operating and storage temperature range Tj, Tstg Symbol VCBO VCEO VECO VEBO IC IB ICM PD Limit 20 12 4.5 7 2 500 15 350 2.8 - 55 to 150 Unit V V V V A m A A m W m W/°C °C Thermal resistance Parameter Junction to ambient(a) Symbol R⍜JA Limit 357 Unit °C/W NOTES: (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. Issue 2 - January 2007 © Zetex Semiconductors plc 2007 .zetex. Characteristics Issue 2 - January 2007 © Zetex Semiconductors plc...