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C1969 - silicon NPN epitaxial planar type transistor

Description

The Eleflow 2SC1969 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers within the HF band, ideal for mobile radio applications.

Features

  • High power gain: Gpe ≥ 12dB @Vcc = 12V, Po = 16W, f = 27MHz.
  • Emitter ballasted construction for reliability and performance.
  • Manufactured incorporating recyclable RoHS compliant materials.
  • Ability to periodically withstand infinite VSWR load when operated @ Vcc = 16V, Po = 20W, f = 27MHz.

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Datasheet Details

Part number C1969
Manufacturer eleflow
File Size 491.86 KB
Description silicon NPN epitaxial planar type transistor
Datasheet download datasheet C1969 Datasheet
Additional preview pages of the C1969 datasheet.

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    Full PDF Text Transcription

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    Description The Eleflow 2SC1969 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers within the HF band, ideal for mobile radio applications. Features • High power gain: Gpe ≥ 12dB @Vcc = 12V, Po = 16W, f = 27MHz • Emitter ballasted construction for reliability and performance. • Manufactured incorporating recyclable RoHS compliant materials. • Ability to periodically withstand infinite VSWR load when operated @ Vcc = 16V, Po = 20W, f = 27MHz. Application 10 to 14 watts output power class AB amplifier applications within HF band.
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