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C1969

C1969 is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
C1969 datasheet preview

C1969 Datasheet

Part number C1969
Datasheet C1969 Datasheet PDF (Download)
File Size 188.94 KB
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
C1969 page 2

C1969 Overview

Gpe≥12dB,f= 27MHz, PO= 16W ·High Reliability APPLICATIONS ·Designed for 10~14 watts output power class AB amplifiers applications in HF band. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA, IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= ∞ 60 25 V V V(BR)EBO Emitter-Base Breakdown Voltage ICBO Collector Cutoff Current IE= 5mA, IC= 0 VCB= 30V;.

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