Datasheet Details
| Part number | C1969 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 188.94 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | C1969-INCHANGE.pdf |
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Overview: INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product.
| Part number | C1969 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 188.94 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | C1969-INCHANGE.pdf |
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·High Power Gain- : Gpe≥12dB,f= 27MHz, PO= 16W ·High Reliability APPLICATIONS ·Designed for 10~14 watts output power class AB amplifiers applications in HF band.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage RBE= ∞ 25 V VEBO Emitter-Base Voltage 5V IC Collector Current Collector Power Dissipation @TC=25℃ PC Collector Power Dissipation @Ta=25℃ Tj Junction Temperature Tstg Storage Temperature Range 6A 20 W 1.7 150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-a Rth j-c Thermal Resistance,Junction to Ambient 73.5 ℃/W Thermal Resistance,Junction to Case 6.25 ℃/W isc website：.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC1969 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA, IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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C1969 | 2SC1969 | Mitsubishi Electric Semiconductor |
| eleflow | C1969 | silicon NPN epitaxial planar type transistor | eleflow |
| Part Number | Description |
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