| Part Number | C1969 Datasheet |
|---|---|
| Manufacturer | Mitsubishi Electric |
| Overview | w w w .d e e h s a t a . u t4 m o c . . |
C1969 Datasheet and Specifications PDF
The C1969 is a 2SC1969.
| Part Number | C1969 Datasheet |
|---|---|
| Description | silicon NPN epitaxial planar type transistor |
| Manufacturer | eleflow |
| Overview |
The Eleflow 2SC1969 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers within the HF band, ideal for mobile radio applications.
Features
• High power gain: Gpe ≥ 12dB @.
* High power gain: Gpe ≥ 12dB @Vcc = 12V, Po = 16W, f = 27MHz * Emitter ballasted construction for reliability and performance. * Manufactured incorporating recyclable RoHS compliant materials. * Ability to periodically withstand infinite VSWR load when operated @ Vcc = 16V, Po = 20W, f = 27MHz. App. |
| Part Number | C1969 Datasheet |
|---|---|
| Description | Silicon NPN Power Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·High Power Gain- : Gpe≥12dB,f= 27MHz, PO= 16W ·High Reliability APPLICATIONS ·Designed for 10~14 watts output power class AB amplifiers applications in HF band. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) S. CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA, IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= ∞ 60 25 V V V(BR)EBO Emitter-Base Breakdown Voltage ICBO Collector Cutoff Current IE= 5mA, IC= 0 VCB= 30V; IE= 0 5V 0.1 mA IEBO Emitter Cutoff C. |