CSD15380F3 Datasheet | Texas Instruments

Features - Ultra-low Ci SS and COSS - Ultra-low Qg and Qgd - Ultra-small footprint - 0.73 mm × 0.64 mm - Ultra-low profile - 0.36-mm max height - Integrated ESD protection diode - Rated > 4-k V HBM - Rated > 2-k V CDM - Lead and halogen free - Ro HS pliant 2 Applications - Optimized for load switch applications - Optimized for general purpose switching applications - Battery applications - Handheld and mobile applications 3 Description This 20-V, 990-mΩ, N-Channel Femto FET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. Ultralow capacitance improves switching speeds. When used in data line applications, the low capacitance minimizes noise coupling. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size. 0.36 mm Product Summary TA = 25°C TYPICAL VALUE Drain-to-Source Voltage Qg Gate Charge Total (4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS = 2.5 V VGS = 4.5 V VGS = 8 V 2220 1170 990 VGS(th) Threshold Voltage DEVICE Device...