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CSD15571Q2 Datasheet 20-V N-Channel MOSFET

Manufacturer: Texas Instruments

General Description

The NexFET™ power MOSFET has been designed to minimize losses in power conversion and load management applications.

The SON 2x2 offers excellent thermal performance for the size of the package.

Top View D1 D2 D 6D 5D PRODUCT SUMMARY VDS Drain to Source Voltage 20 V Qg Gate Charge Total (4.5V) 2.5 nC Qgd Gate Charge Gate to Drain 0.66 nC RDS(on) Drain to Source On Resistance VGS = 4.5V VGS = 10V 16 mΩ 12 mΩ VGS(th) Threshold Voltage 1.45 V ORDERING INFORMATION Device Package Media Qty CSD15571Q2 SON 2-mm × 2-mm Plastic Package 7-Inch Reel 3000 Ship Tape and Reel ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VDS Drain to Source Voltage VGS Gate to Source Voltage Continuous Drain Current (Package Limit) ID Continuous Drain Current(1) IDM Pulsed Drain Current, TA = 25°C(2) PD Power Dissipation(1) TJ, Operating Junction and Storage TSTG Temperature Range EAS Avalanche Energy, single pulse ID = 19A, L = 0.1mH, RG = 25Ω VALUE 20 ±20 22 10 52 2.5 –55 to 150 18 (1) RθJA = 50 on 1in² Cu (2 oz.) on .060" thick FR4 PCB.

Overview

CSD15571Q2 www.ti.com 20-V N-Channel NexFET™ Power MOSFETs Check for Samples: CSD15571Q2 SLPS435 – AUGUST.

Key Features

  • 1.
  • 2 Ultralow Qg and Qgd.
  • Low Thermal Resistance.
  • Avalanche Rated.
  • Pb Free Terminal Plating.
  • RoHS Compliant.
  • Halogen Free.
  • SON 2-mm × 2-mm Plastic Package.