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CSD15571Q2 Datasheet Preview

CSD15571Q2 Datasheet

20-V N-Channel MOSFET

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CSD15571Q2
www.ti.com
20-V N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD15571Q2
SLPS435 – AUGUST 2013
FEATURES
1
2 Ultralow Qg and Qgd
• Low Thermal Resistance
• Avalanche Rated
• Pb Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 2-mm × 2-mm Plastic Package
APPLICATIONS
• Optimized for Load Switch Applications
• Storage, Tablets, and Handheld Devices
• Optimized for Control FET Applications
• Point of Load Synchronous Buck Converters
DESCRIPTION
The NexFET™ power MOSFET has been designed
to minimize losses in power conversion and load
management applications. The SON 2x2 offers
excellent thermal performance for the size of the
package.
Top View
D1
D2
D
6D
5D
PRODUCT SUMMARY
VDS Drain to Source Voltage
20 V
Qg Gate Charge Total (4.5V)
2.5 nC
Qgd Gate Charge Gate to Drain
0.66
nC
RDS(on) Drain to Source On Resistance
VGS = 4.5V
VGS = 10V
16 m
12 m
VGS(th) Threshold Voltage
1.45
V
ORDERING INFORMATION
Device
Package
Media Qty
CSD15571Q2
SON 2-mm × 2-mm
Plastic Package
7-Inch
Reel
3000
Ship
Tape and
Reel
ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise stated
VDS Drain to Source Voltage
VGS Gate to Source Voltage
Continuous Drain Current (Package Limit)
ID Continuous Drain Current(1)
IDM Pulsed Drain Current, TA = 25°C(2)
PD Power Dissipation(1)
TJ, Operating Junction and Storage
TSTG Temperature Range
EAS
Avalanche Energy, single pulse
ID = 19A, L = 0.1mH, RG = 25
VALUE
20
±20
22
10
52
2.5
–55 to 150
18
(1) RθJA = 50 on 1in² Cu (2 oz.) on .060" thick FR4 PCB.
(2) Pulse duration 10μs, duty cycle 2%
UNIT
V
V
A
A
A
W
°C
mJ
30
28
26
24
22
20
18
16
14
12
10
8
0
G3
S
4S
P0108-01
RDS(on) vs VGS
TC = 25°C,I D = 5A
TC = 125°C,I D = 5A
2 4 6 8 10 12 14 16 18 20
VGS - Gate-to- Source Voltage (V)
G001
10
9
ID = 5A
VDS =10V
8
GATE CHARGE
7
6
5
4
3
2
1
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
Qg - Gate Charge (nC)
G001
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
NexFET is a trademark of Texas Instruments.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2013, Texas Instruments Incorporated




etcTI

CSD15571Q2 Datasheet Preview

CSD15571Q2 Datasheet

20-V N-Channel MOSFET

No Preview Available !

CSD15571Q2
SLPS435 – AUGUST 2013
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ELECTRICAL CHARACTERISTICS
TA = 25°C, unless otherwise specified
PARAMETER
Static Characteristics
BVDSS
IDSS
IGSS
VGS(th)
Drain to Source Voltage
Drain to Source Leakage Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
RDS(on) Drain to Source On Resistance
gfs Transconductance
Dynamic Characteristics
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
Rg Series Gate Resistance
Qg Gate Charge Total (4.5V)
Qg Gate Charge Total (10V)
Qgd Gate Charge – Gate to Drain
Qgs Gate Charge Gate to Source
Qg(th)
Gate Charge at Vth
QOSS
Output Charge
td(on)
Turn On Delay Time
tr Rise Time
td(off)
Turn Off Delay Time
tf Fall Time
Diode Characteristics
VSD Diode Forward Voltage
Qrr Reverse Recovery Charge
trr Reverse Recovery Time
TEST CONDITIONS
VGS = 0V, ID = 250μA
VGS = 0V, VDS = 20V
VDS = 0V, VGS = 20V
VDS = VGS, IDS = 250μA
VGS = 4.5V, IDS = 5A
VGS = 10V, IDS = 5A
VDS = 16V, IDS = 5A
VGS = 0V, VDS = 10V, f = 1MHz
VDS = 10V, IDS = 5A
VDS = 10V, VGS = 0V
VDS = 10V, VGS = 4.5V, IDS = 5A
RG = 2
IDS = 5A, VGS = 0V
VDD = 10V, IF = 5A, di/dt = 300A/μs
MIN TYP MAX UNIT
20
1
100
1.10 1.45 1.90
16.0 19.2
12.0 15.0
25
V
μA
nA
V
m
m
S
320 419
184 239
32 42
3.8 7.6
2.5 3.3
5.1 6.7
0.66
0.93
0.52
4.1
4.7
17.2
9.9
4.1
pF
pF
pF
nC
nC
nC
nC
nC
nC
ns
ns
ns
ns
0.82 1 V
10.7 nC
19 ns
THERMAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
PARAMETER
RθJC
RθJA
Thermal Resistance Junction to Case(1)
Thermal Resistance Junction to Ambient(1)(2)
MIN TYP MAX UNIT
4.5 °C/W
65 °C/W
(1) RθJC is determined with the device mounted on a 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 1.5-inch × 1.5-inch (3.81-cm ×
3.81-cm), 0.06-inch (1.52-mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design.
(2) Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu.
2 Submit Documentation Feedback
Product Folder Links: CSD15571Q2
Copyright © 2013, Texas Instruments Incorporated


Part Number CSD15571Q2
Description 20-V N-Channel MOSFET
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