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CSD16321Q5 - 25-V N-Channel Power MOSFET

General Description

This 25V, 1.9mΩ, 5mm × 6mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5V gate drive applications.

Key Features

  • Optimized for 5V gate drive.
  • Ultra-low Qg and Qgd.
  • Low-thermal resistance.
  • Avalanche rated.
  • Lead-free terminal plating.
  • RoHS compliant.
  • SON 5mm × 6mm plastic package 2.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CSD16321Q5 SLPS220E – AUGUST 2009 – REVISED DECEMBER 2023 CSD16321Q5 25V N-Channel NexFET™ Power MOSFET RDS(on) - On-State Resistance (m:) VGS - Gate-to-Source Voltage (V) 1 Features • Optimized for 5V gate drive • Ultra-low Qg and Qgd • Low-thermal resistance • Avalanche rated • Lead-free terminal plating • RoHS compliant • SON 5mm × 6mm plastic package 2 Applications • Point-of-load synchronous buck converter for applications in networking, telecom, and computing systems • Optimized for synchronous FET applications 3 Description This 25V, 1.9mΩ, 5mm × 6mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5V gate drive applications.