CSD16321Q5 - Power MOSFETs

Key Features

Optimized for 5V gate drive.
Ultra Low Qg & Qgd.
Low Thermal Resistance.
Avalanche Rated.
Pb Free Terminal Plating.
RoHS Compliant CICLON NexFET™ Power MOSFETs Product Summary VDS 25 14 2.5 VGS = 3.0V RDS(on) Vth VGS = 4.5V VGS = 8.0V 1.1 2.8 2.1 1.9 V nC nC m m m V G S S S D D D D S 1 S 2 S 3 G 4 D 8 D 7 D 6 D 5 D Qg Qgd QFN 5mm x 6mm Plastic Package Top View Maximum Values (TA = 25oC unless otherwise stated) Symbol VDS VGS ID Drain to Source Voltage.

CSD16321Q5 power mosfets by Ciclon - Datasheet Preview

Datasheet Details

Part number	CSD16321Q5
Manufacturer	Ciclon
File Size	453.43 KB
Description	Power MOSFETs
Datasheet	CSD16321Q5 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
CSD16321Q5	25-V N-Channel Power MOSFET	Texas Instruments
CSD16321Q5C	N-Channel Power MOSFET	Texas Instruments
CSD16322Q5	N-Channel Power MOSFET	Texas Instruments
CSD16323Q3	N-Channel Power MOSFET	Texas Instruments
CSD16325Q5	N-Channel Power MOSFET	Texas Instruments

Other Datasheets by Ciclon

Part Number	Description
CSD16323Q3	Power MOSFET
CSD16401Q5	NexFET Power MOSFETs
CSD16403Q5A	NexFET Power MOSFETs
CSD16406Q3	NexFET Power MOSFETs
CSD16407Q5	NexFET Power MOSFETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

N-Channel www.DataSheet4U.com CSD16321Q5 Features  Optimized for 5V gate drive  Ultra Low Qg & Qgd  Low Thermal Resistance  Avalanche Rated  Pb Free Terminal Plating  RoHS Compliant CICLON NexFET™ Power MOSFETs Product Summary VDS 25 14 2.5 VGS = 3.0V RDS(on) Vth VGS = 4.5V VGS = 8.0V 1.1 2.8 2.1 1.9 V nC nC m m m V G S S S D D D D S 1 S 2 S 3 G 4 D 8 D 7 D 6 D 5 D Qg Qgd QFN 5mm x 6mm Plastic Package Top View Maximum Values (TA = 25oC unless otherwise stated) Symbol VDS VGS ID Drain to Source Voltage Gate to Source Voltage Continuous Drain Current, TC = 25°C Continuous Drain Current1 IDM PD TJ, TSTG EAS 1. 2. Pulsed Drain Current, TA = 25°C2 Power Dissipation1 Operating Junction and Storage Temperature Range Avalanche Energy, single pulse ID =66A, L = 0.