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CSD16321Q5 Datasheet 25-v N-channel Power MOSFET

Manufacturer: Texas Instruments

Overview: CSD16321Q5 SLPS220E – AUGUST 2009 – REVISED DECEMBER 2023 CSD16321Q5 25V N-Channel NexFET™ Power MOSFET RDS(on) - On-State Resistance (m:) VGS - Gate-to-Source Voltage (V).

General Description

This 25V, 1.9mΩ, 5mm × 6mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5V gate drive applications.

Top View 10 9 TC = 25qC, ID = 25 A TC = 125qC, ID = 25 A 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) D007 RDS(ON) vs VGS Product Summary TA = 25°C TYPICAL VALUE VDS Drain-to-Source Voltage 25 Qg Gate Charge Total (4.5V) 14 Qgd Gate Charge Gate-to-Drain 2.5 VGS = 3V 2.8 RDS(on) Drain-to-Source On Resistance VGS = 4.5V 2.1 VGS = 8V 1.9 VGS(th) Threshold Voltage 1.1 DEVICE Device Information(1) MEDIA QTY PACKAGE CSD16321Q5 CSD16321Q5T 13-Inch Reel 7-Inch Reel 2500 250 SON 5.00mm × 6.00mm Plastic Package UNIT V nC nC mΩ V SHIP Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings TA = 25°C VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage Continuous Drain Current (Package Limited) VALUE 25 +10 / –8 100 ID Continuous Drain Current (Silicon Limited), TC = 25°C 177 Continuous Drain Current(1) 29 IDM Pulsed Drain Current(2) Power Dissipation(1) PD Power Dissipation, TC = 25°C TJ, Operating Junction, Tstg Storage Temperature EAS Avalanche Energy, Single Pulse ID = 66A, L = 0.1mH, RG = 25Ω 400 3.1 113 –55 to 150 218 UNIT V V A A W °C mJ (1) Typical RθJA = 40°C/W on 1in2, 2oz Cu pad on 0.06in thick FR4 PCB.

Key Features

  • Optimized for 5V gate drive.
  • Ultra-low Qg and Qgd.
  • Low-thermal resistance.
  • Avalanche rated.
  • Lead-free terminal plating.
  • RoHS compliant.
  • SON 5mm × 6mm plastic package 2.

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