Overview
This 25V, 1.9mΩ, 5mm × 6mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5V gate drive applications. Top View 10 9 TC = 25qC, ID = 25 A TC = 125qC, ID = 25 A 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) D007 RDS(ON) vs VGS Product Summary TA = 25°C TYPICAL VALUE VDS Drain-to-Source Voltage 25 Qg Gate Charge Total (4.5V) 14 Qgd Gate Charge Gate-to-Drain 2.5 VGS = 3V 2.8 RDS(on) Drain-to-Source On Resistance VGS = 4.5V 2.1 VGS = 8V 1.9 VGS(th) Threshold Voltage 1.1 DEVICE Device Information(1) MEDIA QTY PACKAGE CSD16321Q5 CSD16321Q5T 13-Inch Reel 7-Inch Reel 2500 250 SON 5.00mm × 6.00mm Plastic Package UNIT V nC nC mΩ V SHIP Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet.
- Optimized for 5V gate drive
- Ultra-low Qg and Qgd
- Low-thermal resistance
- Avalanche rated
- Lead-free terminal plating
- RoHS compliant
- SON 5mm × 6mm plastic package
