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CSD16321Q5C - N-Channel Power MOSFET

General Description

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications.

Key Features

  • 1.
  • 2 DualCool™ Package SON 5×6mm.
  • Optimized for Two Sided Cooling.
  • Optimized for 5V Gate Drive.
  • Ultralow Qg and Qgd.
  • Low Thermal Resistance.
  • Avalanche Rated.
  • Pb Free Terminal Plating.
  • RoHS Compliant and Halogen Free.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CSD16321Q5C www.ti.com SLPS242B – DECEMBER 2009 – REVISED MAY 2010 DualCool™ N-Channel NexFET™ Power MOSFETs Check for Samples: CSD16321Q5C FEATURES 1 •2 DualCool™ Package SON 5×6mm • Optimized for Two Sided Cooling • Optimized for 5V Gate Drive • Ultralow Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb Free Terminal Plating • RoHS Compliant and Halogen Free APPLICATIONS • Point-of-Load Synchronous Buck in Networking, Telecom and Computing Systems • Optimized for Synchronous FET Applications DESCRIPTION The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications.