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CSD16408Q5 - N-Channel Power MOSFET

General Description

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.

Gate to Source Voltage V RDS(on) vs VGS 12 G006 Produ

Key Features

  • Ultralow Qg and Qgd.
  • Low Thermal Resistance.
  • Avalanche Rated.
  • SON 5-mm × 6-mm Plastic Package 2.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CSD16408Q5 SLPS228B – OCTOBER 2009 – REVISED OCTOBER 2023 N-Channel NexFET™ Power MOSFET RDS(on) − On-State Resistance − mΩ VGS − Gate to Source Voltage − V 1 Features • Ultralow Qg and Qgd • Low Thermal Resistance • Avalanche Rated • SON 5-mm × 6-mm Plastic Package 2 Applications • Point-of-Load Synchronous Buck in Networking, Telecom and Computing Systems • Optimized for Control FET Applications 3 Description The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. S1 8D S2 7D S3 G4 D Top View 6D 5D P0094-01 16 14 12 10 8 6 4 2 0 0 ID = 25A TC = 125°C TC = 25°C 2 4 6 8 10 VGS − Gate to Source Voltage − V RDS(on) vs VGS 12 G006 Product Summary VDS Drain-to-source voltage 25 V Qg Gate charge, total (4.5 V) 6.