Datasheet Details
| Part number | CSD16408Q5 |
|---|---|
| Manufacturer | Texas Instruments |
| File Size | 1.02 MB |
| Description | N-Channel Power MOSFET |
| Datasheet | CSD16408Q5-etcTI.pdf |
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Overview: CSD16408Q5 SLPS228B – OCTOBER 2009 – REVISED OCTOBER 2023 N-Channel NexFET™ Power MOSFET RDS(on) − On-State Resistance − mΩ VGS − Gate to Source Voltage − V.
| Part number | CSD16408Q5 |
|---|---|
| Manufacturer | Texas Instruments |
| File Size | 1.02 MB |
| Description | N-Channel Power MOSFET |
| Datasheet | CSD16408Q5-etcTI.pdf |
|
|
|
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.
S1 8D S2 7D S3 G4 D Top View 6D 5D P0094-01 16 14 12 10 8 6 4 2 0 0 ID = 25A TC = 125°C TC = 25°C 2 4 6 8 10 VGS − Gate to Source Voltage − V RDS(on) vs VGS 12 G006 Product Summary VDS Drain-to-source voltage 25 V Qg Gate charge, total (4.5 V) 6.7 nC Qgd Gate charge, gate-to-drain 1.9 nC rDS(on) Drain-to-source on-resistance VGS = 4.5 V VGS = 10 V 5.4 mΩ 3.6 mΩ VGS(th) Threshold voltage 1.8 V Device CSD16408Q5 Ordering Information Package Media SON 5-mm × 6-mm plastic package 13-inch (33-cm) reel Qty 2500 Ship Tape and reel ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VALUE VDS Drain-to-source voltage 25 VGS Gate-to-source voltage –12 to 16 ID Continuous drain current, TC = 25°C Continuous drain current(1) 113 22 IDM Pulsed drain current, TA = 25°C(2) 141 PD Power dissipation(1) 3.1 TJ, TSTG Operating junction and storage temperature range –55 to 150 EAS Avalanche energy, single-pulse ID = 23 A, L = 0.1 mH, RG = 25 Ω 126 UNIT V V A A A W °C mJ (1) Typical RθJA = 41°C/W on 1-inch2 (6.45-cm2), 2-oz.
(0.071mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4 PCB.
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