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CSD16408Q5
SLPS228B – OCTOBER 2009 – REVISED OCTOBER 2023
N-Channel NexFET™ Power MOSFET
RDS(on) − On-State Resistance − mΩ VGS − Gate to Source Voltage − V
1 Features
• Ultralow Qg and Qgd • Low Thermal Resistance • Avalanche Rated • SON 5-mm × 6-mm Plastic Package
2 Applications
• Point-of-Load Synchronous Buck in Networking, Telecom and Computing Systems
• Optimized for Control FET Applications
3 Description
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.
S1
8D
S2
7D
S3 G4
D
Top View
6D
5D
P0094-01
16 14 12 10
8 6 4 2 0
0
ID = 25A TC = 125°C
TC = 25°C
2
4
6
8
10
VGS − Gate to Source Voltage − V
RDS(on) vs VGS
12
G006
Product Summary
VDS
Drain-to-source voltage
25
V
Qg
Gate charge, total (4.5 V)
6.
CSD16408Q5 Datasheet
