Datasheet Details
| Part number | CSD16415Q5 |
|---|---|
| Manufacturer | Texas Instruments |
| File Size | 531.56 KB |
| Description | 25V N-Channel Power MOSFET |
| Datasheet | CSD16415Q5-etcTI.pdf |
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Overview: Product Folder Sample & Buy Technical Documents Tools & Software Support & Community Reference Design CSD16415Q5 SLPS259A – DECEMBER 2011 – REVISED SEPTEMBER 2015 CSD16415Q5 25-V N-Channel NexFET™ Power MOSFET.
| Part number | CSD16415Q5 |
|---|---|
| Manufacturer | Texas Instruments |
| File Size | 531.56 KB |
| Description | 25V N-Channel Power MOSFET |
| Datasheet | CSD16415Q5-etcTI.pdf |
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This 25 V, 1.3 mΩ, 5 x 6 mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.
Top View S1 8D S2 7D S3 D G4 Added text for spacing Added text for spacing 6D 5D P0094-01 Added text for spacing Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge, Total (4.5 V) Qgd Gate Charge, Gate-to-Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage VALUE 25 21 5.2 VGS = 4.5 V VGS = 10 V 1.5 1.5 0.99 UNIT V nC nC mΩ mΩ V DEVICE CSD16415Q5 Device Information(1) PACKAGE MEDIA QTY SON 5-mm × 6-mm Plastic Package 13-inch Reel 2500 SHIP Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings TA = 25°C VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage Continuous Drain Current (Package Limited) VALUE 25 –12 to 16 100 ID Continuous Drain Current (Silicon Limited), TC = 25°C(1) Continuous Drain Current(1) IDM Pulsed Drain Current, TA = 25°C(2) Power dissipation(1) PD Power Dissipation, , TC = 25°C TJ, Operating Junction and Tstg Storage Temperature EAS Avalanche Energy, Single-Pulse ID = 100 A, L = 0.1 mH, RG = 25 Ω 261 38 200 3.2 156 –55 to 150 500 UNIT V V A A W °C mJ (1) RθJA = 40°C/W on 1 in2 (6.45 cm2) Cu [2 oz.
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