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CSD17311Q5 Datasheet Preview

CSD17311Q5 Datasheet

N-Channel MOSFET

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CSD17311Q5
www.ti.com
SLPS257A – MARCH 2010 – REVISED SEPTEMBER 2010
30V N-Channel NexFET™ Power MOSFET
Check for Samples: CSD17311Q5
FEATURES
1
2 Optimized for 5V Gate Drive
• Ultra Low Qg and Qgd
• Low Thermal Resistance
• Avalanche Rated
• Pb Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 5-mm × 6-mm Plastic Package
APPLICATIONS
• Notebook Point-of-Load
• Point-of-Load Synchronous Buck in
Networking, Telecom and Computing Systems
DESCRIPTION
The NexFET™ power MOSFET has been designed
to minimize losses in power conversion applications
and optimized for 5V gate drive applications.
Top View
S1
8D
S2
7D
S3
G4
6
5
4
3
6D
D
5D
P0094-01
RDS(on) vs VGS
ID = 30A
TC = 125°C
2
1 TC = 25°C
0
0 1 2 3 4 5 6 7 8 9 10
VGS - Gate-to-Source Voltage - V
G006
VDS
Qg
Qgd
RDS(on)
VGS(th)
PRODUCT SUMMARY
Drain to Source Voltage
30
Gate Charge Total (4.5V)
24
Gate Charge Gate to Drain
5.2
Drain to Source On Resistance
Threshold Voltage
VGS = 3V
VGS = 4.5V
VGS = 8V
1.2
V
nC
nC
2.3 m
1.8 m
1.6 m
V
ORDERING INFORMATION
Device
Package
Media Qty
CSD17311Q5
SON 5-mm × 6-mm
Plastic Package
13-Inch
Reel
2500
Ship
Tape and
Reel
ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise stated
VDS Drain to Source Voltage
VGS Gate to Source Voltage
ID
Continuous Drain Current, TC = 25°C
Continuous Drain Current(1)
IDM Pulsed Drain Current, TA = 25°C(2)
PD Power Dissipation(1)
TJ, Operating Junction and Storage
TSTG Temperature Range
EAS
Avalanche Energy, Single Pulse
ID = 113A, L = 0.1mH, RG = 25
VALUE
30
+10 / –8
100
32
200
3.2
UNIT
V
V
A
A
A
W
–55 to 150 °C
638 mJ
(1) Typical RqJA = 40°C/W when mounted on a 1-inch2
(6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 0.06-inch
(1.52-mm) thick FR4 PCB.
(2) Pulse duration 300ms, duty cycle 2% TextAddedForSpacing
Text_added_for_spacing_Text_added_for_spacing
8
7
ID = 30A
VDS = 15V
6
GATE CHARGE
5
4
3
2
1
0
0 5 10 15 20 25 30 35 40
Qg - Gate Charge - nC
G003
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
NexFET is a trademark of Texas Instruments.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2010, Texas Instruments Incorporated




etcTI

CSD17311Q5 Datasheet Preview

CSD17311Q5 Datasheet

N-Channel MOSFET

No Preview Available !

CSD17311Q5
SLPS257A – MARCH 2010 – REVISED SEPTEMBER 2010
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
PARAMETER
Static Characteristics
BVDSS
IDSS
IGSS
VGS(th)
Drain to Source Voltage
Drain to Source Leakage Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
RDS(on) Drain to Source On Resistance
gfs Transconductance
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
RG Series Gate Resistance
Qg Gate Charge Total (4.5V)
Qgd Gate Charge Gate to Drain
Qgs Gate Charge Gate to Source
Qg(th)
Gate Charge at Vth
Qoss
Output Charge
td(on)
Turn On Delay Time
tr Rise Time
td(off)
Turn Off Delay Time
tf Fall Time
Diode Characteristics
VSD Diode Forward Voltage
Qrr Reverse Recovery Charge
trr Reverse Recovery Time
TEST CONDITIONS
VGS = 0V, ID = 250mA
VGS = 0V, VDS = 24V
VDS = 0V, VGS = +10/–8V
VDS = VGS, ID = 250mA
VGS = 3V, ID = 30A
VGS = 4.5V, ID = 30A
VGS = 8V, ID = 30A
VDS = 15V, ID = 30A
VGS = 0V, VDS = 15V,
f = 1MHz
VDS = 15V,
IDS = 30A
VDS = 14.8V, VGS = 0V
VDS = 15V, VGS = 4.5V,
IDS = 30A, RG = 2
ISD = 30A, VGS = 0V
VDD = 14.8V, IF = 30A,
di/dt = 300A/ms
MIN TYP MAX UNIT
30
1
100
0.9 1.2 1.6
2.3 3.1
1.8 2.3
1.6 2
200
V
mA
nA
V
m
m
m
S
3290 4280
1740 2260
85 110
1.2 2.4
24 31
5.2
6.6
3.9
47
12
18
33
12
pF
pF
pF
nC
nC
nC
nC
nC
ns
ns
ns
ns
0.85 1 V
74 nC
39 ns
THERMAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
PARAMETER
RqJC
RqJA
Thermal Resistance Junction to Case(1)
Thermal Resistance Junction to Ambient(1)(2)
MIN TYP
MAX
1
49
UNIT
°C/W
°C/W
(1) RqJC is determined with the device mounted on a 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 1.5-inch × 1.5-inch (3.81-cm ×
3.81-cm), 0.06-inch (1.52-mm) thick FR4 PCB. RqJC is specified by design, whereas RqJA is determined by the user’s board design.
(2) Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu.
2 Submit Documentation Feedback
Product Folder Link(s): CSD17311Q5
Copyright © 2010, Texas Instruments Incorporated


Part Number CSD17311Q5
Description N-Channel MOSFET
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