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CSD17311Q5 Datasheet N-channel MOSFET

Manufacturer: Texas Instruments

Overview: CSD17311Q5 www.ti.com SLPS257A – MARCH 2010 – REVISED SEPTEMBER 2010 30V N-Channel NexFET™ Power MOSFET Check for Samples: CSD17311Q5 RDS(on) - On-State Resistance - mΩ VGS - Gate-to-Source Voltage -.

General Description

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications.

Top View S1 8D S2 7D S3 G4 6 5 4 3 6D D 5D P0094-01 RDS(on) vs VGS ID = 30A TC = 125°C 2 1 TC = 25°C 0 0 1 2 3 4 5 6 7 8 9 10 VGS - Gate-to-Source Voltage - V G006 VDS Qg Qgd RDS(on) VGS(th) PRODUCT SUMMARY Drain to Source Voltage 30 Gate Charge Total (4.5V) 24 Gate Charge Gate to Drain 5.2 Drain to Source On Resistance Threshold Voltage VGS = 3V VGS = 4.5V VGS = 8V 1.2 V nC nC 2.3 mΩ 1.8 mΩ 1.6 mΩ V ORDERING INFORMATION Device Package Media Qty CSD17311Q5 SON 5-mm × 6-mm Plastic Package 13-Inch Reel 2500 Ship Tape and Reel ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VDS Drain to Source Voltage VGS Gate to Source Voltage ID Continuous Drain Current, TC = 25°C Continuous Drain Current(1) IDM Pulsed Drain Current, TA = 25°C(2) PD Power Dissipation(1) TJ, Operating Junction and Storage TSTG Temperature Range EAS Avalanche Energy, Single Pulse ID = 113A, L = 0.1mH, RG = 25Ω VALUE 30 +10 / –8 100 32 200 3.2 UNIT V V A A A W –55 to 150 °C 638 mJ (1) Typical RqJA = 40°C/W when mounted on a 1-inch2 (6.45-cm2), 2-oz.

(0.071-mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4 PCB.

Key Features

  • 1.
  • 2 Optimized for 5V Gate Drive.
  • Ultra Low Qg and Qgd.
  • Low Thermal Resistance.
  • Avalanche Rated.
  • Pb Free Terminal Plating.
  • RoHS Compliant.
  • Halogen Free.
  • SON 5-mm × 6-mm Plastic Package.

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