CSD17505Q5A Datasheet | Texas Instruments

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. Top View S1 8D S2 7D S3 6D G4 5D P0093-01 SPACE RDS(on) vs VGS 16 ID = 20A 14 12 10 8 6 4 2 TC = 25°C TC = 125ºC 0 0 1 2 3 4 5 6 7 8 9 10 VGS - Gate-to- Source Voltage - V PRODUCT SUMMARY TA = 25°C unless otherwise stated VDS Drain to Source Voltage Qg Gate Charge Total (4.5V) Qgd Gate Charge Gate to Drain RDS(on) Drain to Source On Resistance VGS(th) Threshold Voltage TYPICAL VALUE 30 10 2.7 VGS = 4.5V VGS = 10V 1.3 3.7 2.9 UNIT V nC nC mΩ mΩ V.