900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






etcTI

CSD17505Q5A Datasheet Preview

CSD17505Q5A Datasheet

N-Channel MOSFET

No Preview Available !

CSD17505Q5A
www.ti.com
SLPS301A DECEMBER 2010 REVISED JULY 2011
30V, N-Channel NexFETPower MOSFETs
Check for Samples: CSD17505Q5A
FEATURES
1
2 Ultralow Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
SON 5-mm × 6-mm Plastic Package
APPLICATIONS
Point-of-Load Synchronous Buck in
Networking, Telecom, and Computing Systems
Optimized for Control and Synchronous FET
Applications
DESCRIPTION
The NexFETpower MOSFET has been designed
to minimize losses in power conversion applications.
Top View
S1
8D
S2
7D
S3
6D
G4
D
5D
P0093-01
SPACE
RDS(on) vs VGS
16
ID = 20A
14
12
10
8
6
4
2 TC = 25°C
TC = 125ºC
0
0 1 2 3 4 5 6 7 8 9 10
VGS - Gate-to- Source Voltage - V
PRODUCT SUMMARY
TA = 25°C unless otherwise stated
VDS Drain to Source Voltage
Qg Gate Charge Total (4.5V)
Qgd Gate Charge Gate to Drain
RDS(on) Drain to Source On Resistance
VGS(th) Threshold Voltage
TYPICAL VALUE
30
10
2.7
VGS = 4.5V
VGS = 10V
1.3
3.7
2.9
UNIT
V
nC
nC
m
m
V
ORDERING INFORMATION
Device
Package
Media Qty
CSD17505Q5A
SON 5-mm × 6-mm
Plastic Package
13-Inch
Reel
2500
Ship
Tape and
Reel
ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise stated
VALUE UNIT
VDS Drain to Source Voltage
30 V
VGS Gate to Source Voltage
±20 V
ID
Continuous Drain Current, TC = 25°C
Continuous Drain Current(1)
100 A
24 A
IDM Pulsed Drain Current, TA = 25°C(2)
PD Power Dissipation(1)
153 A
3.2 W
TJ, Operating Junction and Storage
TSTG Temperature Range
55 to 150 °C
EAS
Avalanche Energy, single pulse
ID = 76A, L = 0.1mH, RG = 25
290 mJ
(1) Typical RθJA = 39°C/W on 1-inch2 (6.45-cm2), 2-oz.
(0.071-mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4
PCB.
(2) Pulse duration 300μs, duty cycle 2%
SPACE
GATE CHARGE
10
9
ID = 20A
VDD = 15V
8
7
6
5
4
3
2
1
0
0 2 4 6 8 10 12 14 16 18 20
Qg - Gate Charge - nC (nC)
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
NexFET is a trademark of Texas Instruments.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 20102011, Texas Instruments Incorporated




etcTI

CSD17505Q5A Datasheet Preview

CSD17505Q5A Datasheet

N-Channel MOSFET

No Preview Available !

CSD17505Q5A
SLPS301A DECEMBER 2010 REVISED JULY 2011
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
PARAMETER
Static Characteristics
BVDSS
IDSS
IGSS
VGS(th)
Drain to Source Voltage
Drain to Source Leakage Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
RDS(on) Drain to Source On Resistance
gfs Transconductance
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
RG Series Gate Resistance
Qg Gate Charge Total (4.5V)
Qgd Gate Charge Gate to Drain
Qgs Gate Charge Gate to Source
Qg(th)
Gate Charge at Vth
Qoss
Output Charge
td(on)
Turn On Delay Time
tr Rise Time
td(off)
Turn Off Delay Time
tf Fall Time
Diode Characteristics
VSD Diode Forward Voltage
Qrr Reverse Recovery Charge
trr Reverse Recovery Time
TEST CONDITIONS
VGS = 0V, IDS = 250μA
VGS = 0V, VDS = 24V
VDS = 0V, VGS = 20V
VDS = VGS, IDS = 250μA
VGS = 4.5V, IDS = 20A
VGS = 10V, IDS = 20A
VDS = 15V, IDS = 20A
VGS = 0V, VDS = 15V,
f = 1MHz
VDS = 15V, IDS = 20A
VDS = 13.7V, VGS = 0V
VDS = 15V, VGS = 4.5V,
IDS = 20A,RG = 2
ISD = 20A, VGS = 0V
VDD= 13.7V, IF = 20A, di/dt = 300A/μs
MIN TYP MAX UNIT
30 V
1 μA
100 nA
1 1.3 1.8 V
3.7 4.6 m
2.9 3.5 m
82 S
1560
1030
65
1
10
2.7
3.5
1.9
26
8.3
11.5
15
6.1
1980
1330
85
2
13
pF
pF
pF
nC
nC
nC
nC
nC
ns
ns
ns
ns
0.8 1 V
30 nC
28 ns
THERMAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
PARAMETER
RθJC
RθJA
Thermal Resistance Junction to Case(1)
Thermal Resistance Junction to Ambient(1)(2)
MIN TYP MAX UNIT
1.3 °C/W
50 °C/W
(1) RθJC is determined with the device mounted on a 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 1.5-inch × 1.5-inch (3.81-cm ×
3.81-cm), 0.06-inch (1.52-mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the users board design.
(2) Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu.
2 Copyright © 20102011, Texas Instruments Incorporated


Part Number CSD17505Q5A
Description N-Channel MOSFET
Maker etcTI
PDF Download

CSD17505Q5A Datasheet PDF






Similar Datasheet

1 CSD17505Q5A N-Channel MOSFET
etcTI





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy