CSD17505Q5A
www.ti.com
SLPS301A – DECEMBER 2010 – REVISED JULY 2011
30V, N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD17505Q5A
FEATURES
1
•2 Ultralow Qg and Qgd
• Low Thermal Resistance
• Avalanche Rated
• Pb Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 5-mm × 6-mm Plastic Package
APPLICATIONS
• Point-of-Load Synchronous Buck in
Networking, Telecom, and Computing Systems
• Optimized for Control and Synchronous FET
Applications
DESCRIPTION
The NexFET™ power MOSFET has been designed
to minimize losses in power conversion applications.
Top View
S1
8D
S2
7D
S3
6D
G4
D
5D
P0093-01
SPACE
RDS(on) vs VGS
16
ID = 20A
14
12
10
8
6
4
2 TC = 25°C
TC = 125ºC
0
0 1 2 3 4 5 6 7 8 9 10
VGS - Gate-to- Source Voltage - V
PRODUCT SUMMARY
TA = 25°C unless otherwise stated
VDS Drain to Source Voltage
Qg Gate Charge Total (4.5V)
Qgd Gate Charge Gate to Drain
RDS(on) Drain to Source On Resistance
VGS(th) Threshold Voltage
TYPICAL VALUE
30
10
2.7
VGS = 4.5V
VGS = 10V
1.3
3.7
2.9
UNIT
V
nC
nC
mΩ
mΩ
V
ORDERING INFORMATION
Device
Package
Media Qty
CSD17505Q5A
SON 5-mm × 6-mm
Plastic Package
13-Inch
Reel
2500
Ship
Tape and
Reel
ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise stated
VALUE UNIT
VDS Drain to Source Voltage
30 V
VGS Gate to Source Voltage
±20 V
ID
Continuous Drain Current, TC = 25°C
Continuous Drain Current(1)
100 A
24 A
IDM Pulsed Drain Current, TA = 25°C(2)
PD Power Dissipation(1)
153 A
3.2 W
TJ, Operating Junction and Storage
TSTG Temperature Range
–55 to 150 °C
EAS
Avalanche Energy, single pulse
ID = 76A, L = 0.1mH, RG = 25Ω
290 mJ
(1) Typical RθJA = 39°C/W on 1-inch2 (6.45-cm2), 2-oz.
(0.071-mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4
PCB.
(2) Pulse duration ≤300μs, duty cycle ≤2%
SPACE
GATE CHARGE
10
9
ID = 20A
VDD = 15V
8
7
6
5
4
3
2
1
0
0 2 4 6 8 10 12 14 16 18 20
Qg - Gate Charge - nC (nC)
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
NexFET is a trademark of Texas Instruments.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2010–2011, Texas Instruments Incorporated
