CSD17507Q5A Datasheet | Texas Instruments

Features - 1 Ultra-Low Qg and Qgd - Low-Thermal Resistance - Avalanche Rated - Lead-Free Terminal Plating - Ro HS pliant - Halogen Free - SON 5-mm × 6-mm Plastic Package 2 Applications - Point-of-Load Synchronous Buck in Networking, Tele and puting Systems - Optimized for Control FET Applications 3 Description This 30-V, 9-mΩ, SON 5-mm × 6-mm Nex FET™ power MOSFET has been designed to minimize losses in power conversion applications. Top View S1 8D S2 7D S3 6D G4 5D P0093-01 . . Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage TYPICAL VALUE VGS = 4.5 V VGS = 10 V 11.8 9 UNIT V n C n C mΩ . DEVICE CSD17507Q5A...