CSD17585F5 Datasheet | Texas Instruments

Features - 1 Low-On Resistance - Ultra-Low Qg and Qgd - Ultra-Small Footprint - 1.53 mm × 0.77 mm - Low Profile - 0.35-mm Height - Integrated ESD Protection Diode - Rated > 4-k V HBM - Rated > 2-k V CDM - Lead and Halogen Free - Ro HS pliant 2 Applications - Optimized for Industrial Load Switch Applications - Optimized for General Purpose Switching Applications 3 Description This 30-V, 22-mΩ, N-Channel Femto FET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a significant reduction in footprint size. . . . . . . Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage TYPICAL VALUE VGS = 4.5 V VGS = 10 V 26 22 UNIT V n C n C mΩ DEVICE CSD17585F5 CSD17585F5T Device...