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CSD18543Q3A Datasheet Preview

CSD18543Q3A Datasheet

Power MOSFETs

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CSD18543Q3A
SLPS633 – DECEMBER 2016
CSD18543Q3A 60-V N-Channel NexFET™ Power MOSFET
1 Features
1 Ultra-Low Qg and Qgd
• Low RDS(on)
• Low-Thermal Resistance
• Avalanche Rated
• Lead Free
• RoHS Compliant
• Halogen Free
• SON 3.3-mm × 3.3-mm Plastic Package
2 Applications
• Solid State Relay Switch
• DC-DC Conversion
• Secondary Side Synchronous Rectifier
• Isolated Converter Primary Side Switch
• Motor Control
3 Description
This 60-V, 8.1-mΩ, SON 3.3-mm × 3.3-mm
NexFET™ power MOSFET is designed to minimize
losses in power conversion applications.
Top View
S1
8D
S2
7D
S3
6D
D
G4
5D
P0093-01
.
.
Product Summary
TA = 25°C
VDS
Drain-to-Source Voltage
Qg
Gate Charge Total (10 V)
Qgd
Gate Charge Gate-to-Drain
RDS(on) Drain-to-Source On Resistance
VGS(th) Threshold Voltage
TYPICAL VALUE
60
11.1
1.7
VGS = 4.5 V
VGS = 10 V
2.0
12.0
8.1
UNIT
V
nC
nC
m
V
Device Information(1)
DEVICE
MEDIA QTY
PACKAGE
CSD18543Q3A 13-Inch Reel 2500
SON
3.30-mm × 3.30-mm
CSD18543Q3AT 7-Inch Reel 250
Plastic Package
SHIP
Tape
and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
Continuous Drain Current (Package Limited)
VALUE
60
±20
35
UNIT
V
V
ID
Continuous Drain Current (Silicon Limited),
TC = 25°C
Continuous Drain Current(1)
IDM Pulsed Drain Current(2)
Power Dissipation(1)
PD Power Dissipation, TC = 25°C
TJ, Operating Junction,
Tstg Storage Temperature
EAS
Avalanche Energy, Single Pulse
ID = 33 A, L = 0.1 mH, RG = 25
60
A
12
156
A
2.8
W
66
–55 to 150 °C
55
mJ
(1) Typical RθJA = 45°C/W on a 1-in2, 2-oz Cu pad on a
0.06-in thick FR4 PCB.
(2) Max RθJC = 1.9°C/W, pulse duration 100 μs, duty cycle
1%.
RDS(on) vs VGS
30
27
TC = 25°C, I D = 12 A
TC = 125°C, I D = 12 A
24
21
18
15
12
9
6
3
0
0 2 4 6 8 10 12 14 16 18 20
VGS - Gate-to-Source Voltage (V)
D007
1
Gate Charge
10
9
ID = 12 A
VDS = 30 V
8
7
6
5
4
3
2
1
0
0
2
4
6
8
10
12
Qg - Gate Charge (nC)
D004
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.




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CSD18543Q3A Datasheet Preview

CSD18543Q3A Datasheet

Power MOSFETs

No Preview Available !

CSD18543Q3A
SLPS633 – DECEMBER 2016
www.ti.com
Table of Contents
1 Features .................................................................. 1
2 Applications ........................................................... 1
3 Description ............................................................. 1
4 Revision History..................................................... 2
5 Specifications......................................................... 3
5.1 Electrical Characteristics........................................... 3
5.2 Thermal Information .................................................. 3
5.3 Typical MOSFET Characteristics.............................. 4
6 Device and Documentation Support.................... 7
6.1 Receiving Notification of Documentation Updates.... 7
6.2 Community Resources.............................................. 7
6.3 Trademarks ............................................................... 7
6.4 Electrostatic Discharge Caution ................................ 7
6.5 Glossary .................................................................... 7
7 Mechanical, Packaging, and Orderable
Information ............................................................. 8
7.1 Q3A Package Dimensions ........................................ 8
7.2 Q3A Recommended PCB Pattern ............................ 9
7.3 Q3A Recommended Stencil Pattern ....................... 10
7.4 Q3A Tape and Reel Information ............................. 10
4 Revision History
DATE
December 2016
REVISION
*
NOTES
Initial release.
2
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Product Folder Links: CSD18543Q3A
Copyright © 2016, Texas Instruments Incorporated


Part Number CSD18543Q3A
Description Power MOSFETs
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