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CSD19502Q5B Datasheet 80V N-Channel NexFET Power MOSFET

Manufacturer: Texas Instruments

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General Description

This 3.4 mΩ, 80 V, SON 5 mm × 6 mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

Top View S1 8D S2 7D S3 G4 SPACE SPACE D 6D 5D P0093-01 Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (10 V) Qgd Gate Charge Gate to Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage TYPICAL VALUE 80 48 8.6 VGS = 6 V VGS = 10 V 2.7 3.8 3.4 UNIT V nC nC mΩ mΩ V Device CSD19502Q5B CSD19502Q5BT .

Ordering Information(1) Media Qty Package 13-Inch Reel 2500 SON 5 x 6 mm 13-Inch Reel 250 Plastic Package Ship Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet.

Overview

Product Folder Order Now Technical Documents Tools & Software Support & Community CSD19502Q5B SLPS413B – DECEMBER 2013 – REVISED MAY 2017 CSD19502Q5B 80 V N-Channel NexFET™ Power MOSFET.

Key Features

  • 1 Ultra-Low Qg and Qgd.
  • Low Thermal Resistance.
  • Avalanche Rated.
  • Logic Level.
  • Pb-Free Terminal Plating.
  • RoHS Compliant.
  • Halogen Free.
  • SON 5-mm × 6-mm Plastic Package 2.

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