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CSD19506KCS Datasheet 80V N-Channel NexFET Power MOSFET

Manufacturer: Texas Instruments

General Description

This 80 V, 2.0 mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

SPACE Drain (Pin 2) Gate (Pin 1) .

Source (Pin 3) Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (10 V) Qgd Gate Charge Gate to Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage TYPICAL VALUE 80 120 20 VGS = 6 V VGS = 10 V 2.5 2.2 2.0 UNIT V nC nC mΩ mΩ V Device CSD19506KCS Ordering Information(1) Package Media TO-220 Plastic Package Tube Qty 50 Ship Tube (1) For all available packages, see the orderable addendum at the end of the data sheet.

Overview

Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD19506KCS SLPS481B – DECEMBER 2013 – REVISED OCTOBER 2014 CSD19506KCS 80 V N-Channel NexFET™ Power MOSFET.

Key Features

  • 1 Ultra-Low Qg and Qgd.
  • Low Thermal Resistance.
  • Avalanche Rated.
  • Pb-Free Terminal Plating.
  • RoHS Compliant.
  • Halogen Free.
  • TO-220 Plastic Package 2.