Datasheet Details
| Part number | CSD19537Q3 |
|---|---|
| Manufacturer | Texas Instruments |
| File Size | 0.96 MB |
| Description | 100-V N-Channel Power MOSFET |
| Datasheet | CSD19537Q3-etcTI.pdf |
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Overview: CSD19537Q3 SLPS549B – AUGUST 2015 – REVISED NOVEMBER 2022 CSD19537Q3 100-V N-Channel NexFET™ Power MOSFET RDS(on) - On-State Resistance (m:) VGS - Gate-to-Source Voltage (V).
| Part number | CSD19537Q3 |
|---|---|
| Manufacturer | Texas Instruments |
| File Size | 0.96 MB |
| Description | 100-V N-Channel Power MOSFET |
| Datasheet | CSD19537Q3-etcTI.pdf |
|
|
|
This 100-V, 12.1-mΩ, SON 3.3-mm × 3.3-mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
S1 8D S2 7D S3 G4 D Figure 3-1.
Top View 6D 5D P0095-01 40 TC = 25° C, ID = 10 A 35 TC = 125° C, ID = 10 A 30 25 20 15 10 5 0 0 2 4 6 8 10 12 14 16 18 20 VGS - Gate-To-Source Voltage (V) D007 RDS(on) vs VGS Product Summary TA = 25°C TYPICAL VALUE VDS Drain-to-Source Voltage 100 Qg Gate Charge Total (10 V) 16 Qgd Gate Charge Gate-to-Drain 2.9 RDS(on) Drain-to-Source On-Resistance VGS = 6 V VGS = 10 V 13.8 12.1 VGS(th) Threshold Voltage 3 UNIT V nC nC mΩ mΩ V DEVICE CSD19537Q3 CSD19537Q3T .
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